5秒后页面跳转
IMZ88-E PDF预览

IMZ88-E

更新时间: 2024-09-16 13:00:55
品牌 Logo 应用领域
友顺 - UTC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
3页 131K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-26, 6 PIN

IMZ88-E 技术参数

生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
最大集电极电流 (IC):0.7 A集电极-发射极最大电压:20 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):280
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

IMZ88-E 数据手册

 浏览型号IMZ88-E的Datasheet PDF文件第2页浏览型号IMZ88-E的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
IMZ88  
DUAL TRANSISTOR  
GENERAL PURPOSE  
(DUAL TRANSISTOR)  
„
FEATURES  
*Both a 8550S chip and 8050S chip in a SMT package  
„
EQUIVALENT CIRCUITS  
(6)  
(4)  
(5)  
TR2  
TR1  
(1)  
(2)  
(3)  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-26  
Packing  
Lead Free  
Halogen Free  
1
2
3
4
5
6
IMZ88L-AG6 -R  
IMZ88G-AG6-R  
C2 E2 C1 E1 B1 B2 Tape Reel  
IMZ88L-AG6-R  
(1) R: Tape Reel  
(1)Packing Type  
(2)Package Type  
(3)Lead Free  
(2) AG6: SOT-26  
(3) G: Halogen Free, L: Lead Free  
„
MARKING  
www.unisonic.com.tw  
Copyright © 2011 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R215-005.Ca  

与IMZ88-E相关器件

型号 品牌 获取价格 描述 数据表
IMZ88G-AG6-R UTC

获取价格

GENERAL PURPOSE DUAL TRANSISTOR)
IMZ88L-AG6-R UTC

获取价格

GENERAL PURPOSE DUAL TRANSISTOR)
IMZA120R007M1H INFINEON

获取价格

采用TO247-4封装的1200V 7mΩ??CoolSiCTM?碳化硅MOSFET基于先
IMZA120R014M1H INFINEON

获取价格

采用TO247-4封装的1200V 14mΩ??CoolSiCTM?碳化硅MOSFET基于
IMZA120R020M1H INFINEON

获取价格

采用TO247-4封装的1200V 20mΩ  CoolSiCTM 碳化硅MOSFET基于
IMZA120R030M1H INFINEON

获取价格

The CoolSiC? 1200 V, 30 mΩ SiC MOSFET in TO-2
IMZA120R040M1H INFINEON

获取价格

采用TO247-4封装的1200V 40mΩ? CoolSiCTM 碳化硅MOSFET基于
IMZA65R015M2H INFINEON

获取价格

The CoolSiC? MOSFET 650 V, 15 mΩ G2 in a TO-2
IMZA65R020M2H INFINEON

获取价格

The CoolSiC? MOSFET 650 V, 20 mΩ G2 in a TO-2
IMZA65R027M1H INFINEON

获取价格

CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备