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IHW20N135R5 PDF预览

IHW20N135R5

更新时间: 2024-11-21 19:46:35
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
15页 1986K
描述
Insulated Gate Bipolar Transistor,

IHW20N135R5 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.67峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IHW20N135R5 数据手册

 浏览型号IHW20N135R5的Datasheet PDF文件第2页浏览型号IHW20N135R5的Datasheet PDF文件第3页浏览型号IHW20N135R5的Datasheet PDF文件第4页浏览型号IHW20N135R5的Datasheet PDF文件第5页浏览型号IHW20N135R5的Datasheet PDF文件第6页浏览型号IHW20N135R5的Datasheet PDF文件第7页 
InductionꢀHeatingꢀSeries  
ReverseꢀConductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
IHW20N135R5  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  

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