Datasheet > IGC36T120T8LX1SA3

IGC36T120T8LX1SA3

更新时间： 2024-11-25 08:01:43

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	66K
描述
Insulated Gate Bipolar Transistor

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IGC36T120T8LX1SA3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

IGC36T120T8LX1SA3 数据手册

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IGC36T120T8L

IGBT4 Low Power Chip

Features:

Recommended for:



1200V Trench & Field stop technology

low switching losses

positive temperature coefficient

easy paralleling

Qualified according to JEDEC for target

applications



low / medium power modules

Applications:



low / medium power drives

1 )

Chip Type

V_CE

I_Cn

Die Size

6.36 x 5.67 mm²

Package

IGC36T120T8L

1200V 35A

sawn on foil

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

Mechanical Parameters

Die size

6.36 x 5.67

See chip drawing

0.826 x 1.31

36.1

Emitter pad size (incl. gate pad)

Gate pad size

mm²

Area total

Thickness

115

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

743

Photoimide

3200 nm AlSiCu

Ni Ag –system

To achieve a reliable solder connection it is strongly

recommended not to consume the Ni layer completely during

production process

Backside metal

Die bond

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

for original and

sealed MBB bags

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAT IPC ICD, L7653V, L7653P, Edition 1.1, 20.06.2013

12 3 4 5

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