是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.58 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IGC76T65T8RM | INFINEON |
获取价格 |
TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
IGC89T170S8RM | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, 10.09 X 8.85 MM, D | |
IGC99T120T6RH | INFINEON |
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IGBT4 High Power Chip | |
IGC99T120T6RL | INFINEON |
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IGBT4 Low Power Chip | |
IGC99T120T6RM | INFINEON |
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IGBT4 Medium Power Chip | |
IGC99T120T8RH | INFINEON |
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Insulated Gate Bipolar Transistor | |
IGC99T120T8RL | INFINEON |
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Insulated Gate Bipolar Transistor | |
IGC99T120T8RLX1SA3 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-5 | |
IGC99T120T8RM | INFINEON |
获取价格 |
TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
IGC99T120T8RQ | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor |