Datasheet > IGC99T120T8RQ

IGC99T120T8RQ

更新时间： 2024-09-16 21:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	82K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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IGC99T120T8RQ 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.02
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IGC99T120T8RQ 数据手册

IGC99T120T8RQ

High Speed IGBT in Trench and Fieldstop Technology

Features:

This chip is used for:



1200V Trench & Field stop technology

low switching losses

positive temperature coefficient

easy paralleling



power modules

Applications:



high frequency drives

UPS

Welding

Solar inverters

Chip Type

V_CE

I_Cn

Die Size

Package

IGC99T120T8RQ 1200V 100A

9.5 x 10.39 mm²

sawn on foil

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

Mechanical Parameters

Die size

9.5 x 10.39

See chip drawing

1.31 x 0.81

98.71

Emitter pad size

Gate pad size

Area total

mm²

Thickness

115

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

258

Photoimide

3200 nm AlSiCu

Ni Ag –system

To achieve a reliable solder connection it is strongly

recommended not to consume the Ni layer completely during

production process

Backside metal

Die bond

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

for original and

sealed MBB bags

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7683Q, L7683S, Edition 1.1, 20.06.2013

12 3 4 5

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