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IGC99T120T6RL PDF预览

IGC99T120T6RL

更新时间: 2024-11-05 11:19:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管双极性晶体管
页数 文件大小 规格书
5页 75K
描述
IGBT4 Low Power Chip

IGC99T120T6RL 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIE
包装说明:UNCASED CHIP, R-XUUC-NReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.56
Is Samacsys:N集电极-发射极最大电压:1200 V
配置:SINGLE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-XUUC-N
元件数量:1最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IGC99T120T6RL 数据手册

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IGC99T120T6RL  
IGBT4 Low Power Chip  
FEATURES:  
·
·
·
·
1200V Trench + Field Stop technology  
low switching losses  
positive temperature coefficient  
easy paralleling  
This chip is used for:  
low / medium power modules  
C
E
·
Applications:  
low / medium power drives  
G
·
Chip Type  
VCE  
ICn  
Die Size  
10.39 x 9.5 mm2  
Package  
IGC99T120T6RL 1200V 100A  
sawn on foil  
MECHANICAL PARAMETER  
Raster size  
10.39 x 9.5  
7.987 x 8.923  
1.31 x 0.811  
98.7 / 76.1  
115  
Emitter pad size (incl. gate pad)  
Gate pad size  
mm2  
Area total / active  
Thickness  
µm  
mm  
grd  
Wafer size  
150  
Flat position  
90  
Max.possible chips per wafer  
Passivation frontside  
Pad metal  
140  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
Backside metal  
Die bond  
suitable for epoxy and soft solder die bonding  
Electrically conductive glue or solder  
Wire bond  
Al, <500µm  
Reject ink dot size  
Æ 0.65mm ; max 1.2mm  
Store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended storage environment  
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7683C, Edition 1, 31.10.2007  

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