是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
Is Samacsys: | N | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUUC-N |
元件数量: | 1 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IGC99T120T6RM | INFINEON |
获取价格 |
IGBT4 Medium Power Chip | |
IGC99T120T8RH | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
IGC99T120T8RL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
IGC99T120T8RLX1SA3 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-5 | |
IGC99T120T8RM | INFINEON |
获取价格 |
TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
IGC99T120T8RQ | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
IGCM04B60GA | INFINEON |
获取价格 |
Control Integrated Power System | |
IGCM04B60GA_15 | INFINEON |
获取价格 |
Control Integrated Power System | |
IGCM04B60HA | INFINEON |
获取价格 |
Control Integrated Power System | |
IGCM04B60HA_15 | INFINEON |
获取价格 |
Control Integrated Power System |