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IGC54T65T8RM PDF预览

IGC54T65T8RM

更新时间: 2024-11-24 11:15:31
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
9页 103K
描述
TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术,为行业树立新标准。

IGC54T65T8RM 数据手册

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IGC54T65T8RM  
IGBT3 Chip Medium Power  
Features  
• VCES = 650 V  
• ICn = 100 A  
• 650 V trench & field stop technology  
• High short circuit capability, self limiting short circuit current  
• Positive temperature coefficient  
• Easy paralleling  
Potential applications  
• Drives  
Product validation  
• Technology qualified for industrial applications. Ready for validation in industrial applications  
according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22  
Description  
• Recommended for power modules  
Type  
Die size  
Delivery form  
IGC54T65T8RM  
5.97 mm x 8.97 mm  
Sawn on foil  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.00  
2023-04-28  

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