生命周期: | Contact Manufacturer | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.38 | 其他特性: | LOW NOISE |
外壳连接: | GATE | 配置: | SINGLE |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 15 pF |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.375 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IFN152 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-18 | |
IFN17 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-226 | |
IFN2106 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
IFN2110 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta | |
IFN363 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-226 | |
IFN40 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 | |
IFN421 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78 | |
IFN422 | INTERFET |
获取价格 |
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78 | |
IFN423 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | DUAL | 60UA I(DSS) | TO-78 | |
IFN424 | INTERFET |
获取价格 |
Dual N-Channel Silicon Junction Field-Effect Transistor |