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IFN5566

更新时间： 2024-09-25 23:58:31
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其他 - ETC 晶体晶体管
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描述
TRANSISTOR | JFET | N-CHANNEL | DUAL | 5MA I(DSS) | TO-78

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中文翻译

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IFN5566 数据手册

  
B-46  
01/99  
IFN5564, IFN5565, IFN5566  
N-Channel Dual Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C.  
¥ Wide Band Differential  
Amplifier  
¥ Commutators  
A
Reverse Gate Source & Reverse Gate Drain Voltage  
– 40 V  
50 mA  
650 mW  
3.3 mW/°C  
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
IFN5564  
IFN5565  
IFN5566  
Process NJ72  
Test Conditions  
At 25°C free air temperature:  
Static Electrical Characteristics  
Min Max Min Max Min Max Unit  
Gate Source Breakdown Voltage  
V
– 40  
– 40  
– 40  
V
– 100 pA  
– 200 nA  
I = – 1µA, V = ØV  
G DS  
(BR)GSS  
– 100  
– 200  
– 100  
– 200  
V
= – 20V, V = ØV  
DS  
GS  
Gate Leakage Voltage  
I
GSS  
T = 150°C  
A
Gate Source Cutoff Voltage  
Gate Source Voltage  
V
– 0.5 – 3 – 0.5 – 3 – 0.5 – 3  
V
V
V
= 15V, I = 1 nA  
GS(OFF)  
DS D  
V
1
1
1
V
= ØV, I = 2 mA  
GS(f)  
DS G  
Saturation Current (Pulsed)  
Static Drain Source ON Resistance  
I
5
30  
5
30  
5
30  
mA  
Ω
V
= 15V, V = ØV  
DSS  
DS GS  
rDS  
100  
100  
100  
I = 1 mA, V = ØV  
D GS  
(ON)  
Dynamic Electrical Characteristics  
7000 12500 7000 12500 7000 12500 µhmo  
V
= 15V, I = 2 mA  
D
f = 1 kHz  
DG  
Common Source  
g
fs  
Forward Transconductance  
7000  
7000  
7000  
µhmo  
f = 100 MHz  
f = 1 kHz  
f = 1 MHz  
f = 1 MHz  
Common Source Output Transconductance  
Common Source Input Capacitance  
g
45  
12  
3
45  
12  
3
45 µhmo  
V
= 15V, I = 2 mA  
os  
DS D  
C
12  
3
pF  
pF  
V
= 15V, I = 2 mA  
iss  
DS D  
Common Source Reverse Transfer Capacitance C  
rss  
V
= 15V, I = 2 mA  
D
DS  
V
= 15V, I = 2 mA  
D
DS  
Noise Figure  
NF  
1
1
1
dB  
f = 10 Hz  
f = 10 Hz  
R = 1 MΩ  
G
Equivalent Short Circuit Input Noise Voltage e¯  
50  
50  
50 nV/√Hz  
V
= 15V, I = 2 mA  
N
DG  
D
Characteristics  
Saturation Drain Current Ratio (Pulsed)  
I
0.95  
0.95  
1
0.95  
0.9  
1
0.95  
0.9  
1
–
–
V
= 15V, V = ØV  
DSS1  
DG GS  
I
DSS2  
Differential Gate Source Voltage  
Gate Source Voltage Differential Drift  
|V  
– V  
|
5
10  
10  
1
10  
25  
25  
1
20  
mV  
V
= 15V, I = 2 mA  
GS(1) GS(2)  
DS D  
∆|V  
– V  
|
50 µV/°C  
50 µV/°C  
V
= 15V,  
T = 25°C T = 125°C  
A B  
GS(f) GS(f)  
DS  
∆T  
I = 2 mA  
T = 55°C T = 25°C  
A B  
D
Transconductance Ratio (Pulsed)  
g
1
–
–
V
= 15V, I = 2 mA  
fs(1)  
DS D  
g
fs(2)  
TOÐ71 Package  
Dimensions in Inches (mm)  
Pin Configuration  
1 Source, 2 Drain, 3 Gate, 4 Omitted,  
5 Source, 6 Drain, 7 Gate, 8 Omitted  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  
1

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