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IFN5912 PDF预览

IFN5912

更新时间: 2024-02-06 19:55:09
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描述
TRANSISTOR | JFET | N-CHANNEL | 7MA I(DSS) | TO-78

IFN5912 数据手册

  
01/99  
B-47  
IFN5911, IFN5912  
N-Channel Dual Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ VHF Amplifiers  
¥ Wideband Differential  
Amplifiers  
A
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
50 mA  
500 mW  
4 mW/°C  
Storage Temperature Range  
– 65°C to 200°C  
At 25°C free air temperature:  
Static Electrical Characteristics  
Gate Source Breakdown Voltage  
IFN5911  
IFN5912  
Process NJ30L or NJ36D  
Test Conditions  
Min Max Min Max Unit  
V
– 25  
– 25  
V
– 100 pA  
– 250 nA  
– 100 pA  
– 100 nA  
I = – 1 µA, V = ØV  
G DS  
(BR)GSS  
– 100  
– 250  
– 100  
– 100  
– 5  
V
= – 15V, V = ØV  
DS  
GS  
Gate Reverse Current  
Gate Operating Current  
I
GSS  
V
= – 15V, V = ØV  
DS  
T = 150°C  
A
GS  
V
= 10V, I = 5 mA  
D
DG  
I
G
V
= 10V, I = 5 mA  
D
T = 125°C  
A
DG  
Gate Source Cutoff Voltage  
Gate Source Voltage  
V
– 1  
– 1  
– 5  
V
V
V
= 10V, I = 1 nA  
GS(OFF)  
DS D  
V
– 0.3 – 4 – 0.3 – 4  
40 40  
V
= 10V, I = 5 mA  
GS  
DS D  
Drain Saturation Current (Pulsed)  
I
7
7
mA  
V
= 10V, V = ØV  
DSS  
DS GS  
Dynamic Electrical Characteristics  
3000 10000 3000 10000 µS  
3000 10000 3000 10000 µS  
V
= 10V, I = 5 mA  
D
f = 1 kHz  
Common Source  
Forward Transconductance  
DG  
g
g
fs  
V
= 10V, I = 5 mA  
D
f = 100 MHz  
f = 1 kHz  
DG  
100  
150  
5
100  
150  
5
µS  
µS  
pF  
V
= 10V, I = 5 mA  
D
Common Source  
Output Conductance  
DG  
os  
V
= 10V, I = 5 mA  
D
f = 100 MHz  
f = 1 MHz  
DG  
Common Source Input Capacitance  
C
V
= 10V, I = 5 mA  
iss  
DG D  
Common Source  
Reverse Transfer Capacitance  
C
1.2  
20  
1
1.2  
20  
1
pF  
V
= 10V, I = 5 mA  
f = 1 MHz  
f = 10 kHz  
f = 10 Hz  
rss  
DG D  
Equivalent Short Circuit  
Input Noise Voltage  
nV/Hz  
e¯  
V
= 10V, I = 5 mA  
N
DG D  
V
= 10V, I = 5 mA  
D
DG  
Noise Figure  
NF  
dB  
nA  
R = 100 K  
G
Differential Gate Current  
|I | – |I  
|
20  
1
20  
1
V
= 10V, I = 5 mA  
T = 125°C  
A
G1  
G2  
DG  
D
Saturation Drain Current Ratio  
Differential Gate Source Voltage  
I
/I  
0.95  
0.95  
0.95  
0.95  
V
= 10V, V = ØV  
DSS1 DSS2  
DS GS  
V
– V  
10  
15  
mV  
V = 10V, I = 5 mA  
DG D  
GS1  
GS2  
V – V  
T = 25°C  
A
GS1  
GS2  
20  
40 µV/°C  
V
= 10V, I = 5 mA  
D
DG  
T  
T = 125°C  
B
Gate Source Voltage  
Differential Drift  
V – V  
T = – 55°C  
A
GS1  
GS2  
20  
1
40 µV/°C  
1
V
= 10V, I = 5 mA  
D
DG  
T  
T = 25°C  
B
Transconductance Ratio  
g
/g  
V
= 10V, I = 5 mA  
f = 1 kHz  
fs1 fs2  
DG D  
TOÐ78 Package  
See Section G for Outline Dimensions  
Pin Configuration  
1 Source, 2 Drain, 3 Gate, 4 Case,  
5 Source, 6 Drain, 7 Gate, 8 Omitted  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

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Optional bluetooth/internal WiFi