Datasheet > 存储 > SRAM> IDT71V428S15YYYGI

IDT71V428S15YYYGI

更新时间： 2024-11-07 03:04:55

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
9页	77K
描述
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)

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IDT71V428S15YYYGI 数据手册

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3.3V CMOS Static RAM

4 Meg (1M x 4-Bit)

IDT71V428S

IDT71V428L

Features

◆

Description

◆

1M x 4 advanced high-speed CMOS Static RAM

JEDEC Center Power / GND pinout for reduced noise

Equal access and cycle times

The IDT71V428 is a 4,194,304-bit high-speed Static RAM orga-

nized as 1M x 4. It is fabricated using IDT’s high-perfomance, high-

reliability CMOS technology. This state-of-the-art technology, com-

bined with innovative circuit design techniques, provides a cost-

effective solution for high-speed memory needs.

— Commercial and Industrial: 10/12/15ns

Single 3.3V power supply

One Chip Select plus one Output Enable pin

Bidirectional data inputs and outputs directly

LVTTL-compatible

◆

TheIDT71V428has anoutputenablepinwhichoperates as fastas

5ns, withaddress access times as fastas 10ns. Allbidirectionalinputs

andoutputs ofthe IDT71V428are LVTTL-compatible andoperationis

from a single 3.3V supply. Fully static asynchronous circuitry is used,

requiringnoclocks orrefreshforoperation.

◆

Low power consumption via chip deselect

Available in 32-pin, 400 mil plastic SOJ package.

The IDT71V428 is packaged in a 32-pin, 400 mil Plastic SOJ.

Functional Block Diagram

•

4,194,304-BIT

MEMORY ARRAY

ADDRESS

DECODER

A19

I/O0 – I/O3

•

I/O CONTROL

CONTROL

LOGIC

3623 drw 01

SEPTEMBER 2004

DSC-3623/06

12 3 4 5 6 7...9

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