Datasheet > 存储 > SRAM> IDT70V7519S133DR

IDT70V7519S133DR

更新时间： 2024-10-28 23:01:07

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
22页	492K
描述
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

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中文翻译

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数据手册

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IDT70V7519S133DR 数据手册

HIGH-SPEED 3.3V 256K x 36

SYNCHRONOUS

BANK-SWITCHABLE

IDT70V7519S

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

– Data input, address, byte enable and control registers

– Self-timedwriteallowsfastcycletime

Separate byte controls for multiplexed bus and bus

matching compatibility

LVTTL- compatible, 3.3V (±150mV) power supply

for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

Available in a 208-pin Plastic Quad Flatpack (PQFP),

208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball

GridArray(BGA)

◆

256K x 36 Synchronous Bank-Switchable Dual-ported

SRAM Architecture

– 64 independent 4K x 36 banks

– 9 megabits of memory on chip

Bank access controlled via bank address pins

◆

High-speed data access

– Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns

(133MHz) (max.)

– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

Counter enable and repeat features

Dual chip enables allow for depth expansion without

◆

additional logic

Full synchronous operation on both ports

◆

– 5ns cycle time, 200MHzoperation(14Gbps bandwidth)

– Fast 3.4ns clock to data out

◆

Supports JTAG features compliant with IEEE 1149.1

FunctionalBlockDiagram

PL/FT^L

OPT^L

PL/FT^R

OPT^R

CLK^L

CLK^R

ADS^L

ADS^R

CNTEN^L

REPEAT^L

R/W^L

CNTEN^R

REPEAT^R

R/W^R

CE^0R

CE^1R

BE^3R

BE^2R

BE^1R

BE^0R

OE^R

MUX

CE^0L

CE^1L

BE^3L

BE^2L

BE^1L

BE^0L

OE^L

CONTROL

LOGIC

CONTROL

LOGIC

4Kx36

MEMORY

ARRAY

(BANK 0)

MUX

I/O

CONTROL

I/O

I/O^0L-35L

I/O^0R-35R

CONTROL

4Kx36

MEMORY

ARRAY

A^11R

(BANK 1)

A^11L

A^0L

ADDRESS

DECODE

A^0R

MUX

BA^5R

BA^4R

BA^5L

BA^4L

BA^3R

BA^2R

BA^1R

BA^0R

BANK

DECODE

BANK

DECODE

BA^1L

BA^0L

MUX

4Kx36

MEMORY

ARRAY

(BANK 63)

NOTE:

MUX

1. The Bank-Switchable dual-port uses a true SRAM

core instead of the traditional dual-port SRAM core.

As a result, it has unique operating characteristics.

Please refer to the functional description on page 19

for details.

5618 drw 01

TMS

TCK

TRST

TDI

TDO

JTAG

DECEMBER 2002

DSC 5618/5

12 3 4 5 6 7...22

中文翻译

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与IDT70V7519S133DR相关器件

型号	品牌	获取价格	描述	数据表
IDT70V7519S133DRG	IDT	获取价格	Dual-Port SRAM, 256KX36, 15ns, PQFP208, PLASTIC, QFP-208
IDT70V7519S133DRI	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S133DRI8	IDT	获取价格	Dual-Port SRAM, 256KX36, 15ns, PQFP208, PLASTIC, QFP-208
IDT70V7519S166BC	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S166BC8	IDT	获取价格	Dual-Port SRAM, 256KX36, 12ns, CMOS, PBGA256, BGA-256
IDT70V7519S166BCG	IDT	获取价格	Dual-Port SRAM, 256KX36, 12ns, PBGA256, BGA-256
IDT70V7519S166BCG8	IDT	获取价格	Dual-Port SRAM, 256KX36, 12ns, PBGA256, BGA-256
IDT70V7519S166BCI	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.
IDT70V7519S166BCI8	IDT	获取价格	Dual-Port SRAM, 256KX36, 12ns, CMOS, PBGA256, BGA-256
IDT70V7519S166BF	IDT	获取价格	HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.

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