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IDT70V7519S200BC8 PDF预览

IDT70V7519S200BC8

更新时间: 2024-11-25 14:51:23
品牌 Logo 应用领域
艾迪悌 - IDT 时钟静态存储器内存集成电路
页数 文件大小 规格书
22页 255K
描述
Dual-Port SRAM, 256KX36, 10ns, CMOS, PBGA256, BGA-256

IDT70V7519S200BC8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:LBGA, BGA256,16X16,40针数:256
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.28
最长访问时间:10 ns其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):200 MHzI/O 类型:COMMON
JESD-30 代码:S-PBGA-B256JESD-609代码:e0
长度:17 mm内存密度:9437184 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端口数量:2端子数量:256
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装等效代码:BGA256,16X16,40
封装形状:SQUARE封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.5 mm最大待机电流:0.03 A
最小待机电流:3.15 V子类别:SRAMs
最大压摆率:0.95 mA最大供电电压 (Vsup):3.45 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn63Pb37)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:17 mmBase Number Matches:1

IDT70V7519S200BC8 数据手册

 浏览型号IDT70V7519S200BC8的Datasheet PDF文件第2页浏览型号IDT70V7519S200BC8的Datasheet PDF文件第3页浏览型号IDT70V7519S200BC8的Datasheet PDF文件第4页浏览型号IDT70V7519S200BC8的Datasheet PDF文件第5页浏览型号IDT70V7519S200BC8的Datasheet PDF文件第6页浏览型号IDT70V7519S200BC8的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V 256K x 36  
SYNCHRONOUS  
PRELIMINARY  
IDT70V7519S  
BANK-SWITCHABLE  
DUAL-PORT STATIC RAM  
WITH 3.3V OR 2.5V INTERFACE  
ꢀeatures:  
256K x 36 Synchronous Bank-Switchable Dual-ported  
SRAM Architecture  
Data input, address, byte enable and control registers  
– Self-timedwriteallowsfastcycletime  
Separate byte controls for multiplexed bus and bus  
matching compatibility  
LVTTL- compatible, 3.3V (±150mV) power supply  
for core  
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V  
(±100mV) power supply for I/Os and control signals on  
each port  
Industrial temperature range (-40°C to +85°C) is  
available at 133MHz.  
64 independent 4K x 36 banks  
– 9 megabits of memory on chip  
Bank access controlled via bank address pins  
High-speed data access  
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)  
Industrial: 4.2ns (133MHz) (max.)  
Selectable Pipelined or Flow-Through output mode  
Counter enable and repeat features  
Dual chip enables allow for depth expansion without  
additional logic  
Full synchronous operation on both ports  
– 6ns cycle time, 166MHzoperation(12Gbps bandwidth)  
– Fast 3.6ns clock to data out  
Available in a 208-pin Plastic Quad Flatpack (PQFP),  
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball  
GridArray(BGA)  
Supports JTAG features compliant with IEEE 1149.1  
– 1.7ns setup to clock and 0.5ns hold on all control, data, and  
address inputs @ 166MHz  
ꢀunctionalBlockDiagram  
PL/FTL  
OPTL  
PL/FTR  
OPTR  
CLKL  
CLKR  
ADSL  
ADSR  
CNTENL  
REPEATL  
R/WL  
CNTENR  
REPEATR  
R/WR  
CE0R  
CE1R  
BE3R  
BE2R  
BE1R  
BE0R  
OER  
MUX  
CE0L  
CE1L  
BE3L  
BE2L  
BE1L  
BE0L  
OEL  
CONTROL  
LOGIC  
CONTROL  
LOGIC  
4Kx36  
MEMORY  
ARRAY  
(BANK 0)  
MUX  
MUX  
I/O  
CONTROL  
I/O  
I/O0L-35L  
I/O0R-35R  
CONTROL  
4Kx36  
MEMORY  
ARRAY  
A11R  
(BANK 1)  
A11L  
A0L  
ADDRESS  
ADDRESS  
DECODE  
DECODE  
A0R  
MUX  
BA5R  
BA4R  
BA5L  
BA4L  
BA3R  
BA2R  
BA1R  
BA0R  
BANK  
DECODE  
BA  
BA  
3L  
BANK  
DECODE  
2L  
BA1L  
BA0L  
MUX  
4Kx36  
MEMORY  
ARRAY  
(BANK 63)  
NOTE:  
MUX  
1. The Bank-Switchable dual-port uses a true SRAM  
core instead of the traditional dual-port SRAM core.  
As a result, it has unique operating characteristics.  
Please refer to the functional description on page 19  
for details.  
,
5618 drw 01  
TMS  
TCK  
TRST  
TDI  
TDO  
JTAG  
JANUARY 2002  
1
DSC 5618/3  
©2002IntegratedDeviceTechnology,Inc.  

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