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IDT70V35S20PF PDF预览

IDT70V35S20PF

更新时间: 2024-10-28 14:51:23
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 153K
描述
Dual-Port SRAM, 8KX18, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

IDT70V35S20PF 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100针数:100
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.24
Is Samacsys:N最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:S-PQFP-G100
JESD-609代码:e0长度:14 mm
内存密度:147456 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端口数量:2
端子数量:100字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP100,.63SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.005 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.2 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm
Base Number Matches:1

IDT70V35S20PF 数据手册

 浏览型号IDT70V35S20PF的Datasheet PDF文件第2页浏览型号IDT70V35S20PF的Datasheet PDF文件第3页浏览型号IDT70V35S20PF的Datasheet PDF文件第4页浏览型号IDT70V35S20PF的Datasheet PDF文件第5页浏览型号IDT70V35S20PF的Datasheet PDF文件第6页浏览型号IDT70V35S20PF的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
8/4K x 18 DUAL-PORT  
STATIC RAM  
PRELIMINARY  
IDT70V35/34S/L  
ꢀeatures  
True Dual-Ported memory cells which allow simultaneous  
IDT70V35/34 easily expands data bus width to 36 bits or  
more using the Master/Slave select when cascading more  
than one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
reads of the same memory location  
High-speed access  
– Commercial:15/20/25ns (max.)  
Industrial:20ns  
Low-power operation  
BUSY and Interrupt Flag  
On-chip port arbitration logic  
IDT70V35/34S  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP  
Active:430mW(typ.)  
Standby: 3.3mW (typ.)  
IDT70V35/34L  
Active:415mW(typ.)  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
bus compatibility  
ꢀunctional Block Diagram  
WL  
R/  
R/WR  
UBR  
UBL  
LBR  
CER  
OER  
LBL  
CEL  
OEL  
,
I/O9L-I/O17L  
I/O9R-I/O17R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O8R  
I/O0L-I/O8L  
(2,3)  
BUSYL  
(2,3)  
BUSYR  
(1)  
(1)  
A12R  
A12L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0L  
A0R  
13  
13  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CER  
OER  
R/WR  
CEL  
OEL  
R/WL  
SEMR  
INTR  
SEML  
INTL  
(3)  
(3)  
M/S  
5624 drw 01  
NOTES:  
1. A12 is a NC for IDT70V34.  
2. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
3. BUSY outputs and INT outputs are non-tri-stated push-pull.  
JULY 2002  
1
DSC-5624/3  
©2002IntegratedDeviceTechnology,Inc.  

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