Datasheet > IBM13Q16734HCB-10T

IBM13Q16734HCB-10T

更新时间： 2024-10-28 23:57:39

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
14页	262K
描述
x72 SDRAM Module

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IBM13Q16734HCB-10T 数据手册

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IBM13Q16734HCB

16M x 72 Registered SDRAM Module

Features

• 200-Pin JEDEC Standard, Registered 8-Byte

Dual In-line Memory Module

• Automatic and controlled Precharge Commands

• Programmable Operation:

• 16M x 72 Synchronous DRAM DIMM

• Performance:

-SDRAM CAS Latency: 2

-Burst Type: Sequential or Interleave

-Burst Length: 2

-Operation: Burst Read and Write or Multiple

Burst Read with Single Write

CAS Latency = 2*

Clock Frequency

Clock Cycle

-10

Units

MHz

CK2

AC2

• Suspend Mode and Power Down Mode

• 12/9/2 Addressing (Row/Column/Bank)

• 4096 Refresh cycles distributed across 64ms

• Parallel Presence Detect

Clock Access Time

11.3

* SDRAM CAS latency = 2; DIMM CAS Latency = 3

• Inputs and outputs are LVTTL (3.3V) compatible

• Single 3.3V to 3.6V Power Supply

• Single Pulsed RAS interface

• Card size: 6.05" x 1.50" x 0.158"

• Gold contacts

• Fully Synchronous to positive Clock Edge

• Data Mask control

• SDRAMS in TSOP Type II Package

• Auto Refresh (CBR) and Self Refresh

Description

IBM13Q16734HCB is a registered 200-pin Synchro-

nous DRAM Dual In-line Memory Module (DIMM)

which is organized as a 16Mx72 high-speed mem-

ory array. The DIMM uses eighteen x8 SDRAMs in

400mil TSOP II packages. The DIMM achieves high

speed data transfer rates of up to 66MHz by

employing a prefetch/pipeline hybrid architecture

that supports the JEDEC 1N rule while allowing very

low burst power.

lowing clock.

Prior to any Access operation, the CAS latency,

burst type, burst length, and burst operation type

must be programmed into the DIMM by address

inputs A0-A13 using the Mode Register Set cycle.

The DIMM uses parallel presence detects imple-

mented according to the JEDEC standard.

The DIMM is intended to comply with all non-

optional JEDEC standards set for the 200-pin regis-

tered SDRAM DIMMs.

All IBM 200-pin DIMMs provide a high performance,

flexible 8-byte interface in a 6.05” long high-perfor-

mance footprint. Related products include both EDO

DRAM and SDRAM unbuffered DIMMs in both non-

parity x64 and ECC-Optimized x72 configurations in

the 168 pin form factor.

All control and address signals are synchronized

with the positive edge of an externally supplied

clock. They are latched in an on-DIMM pipeline

Card Outline

(Front)

(Back)

101

16 17

116 117

78 79

178 179

100

200

04K8915.C75644E

6/00

Use is further subject to the provisions at the end of this document.

Page 1 of 14

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与IBM13Q16734HCB-10T相关器件

型号	品牌	获取价格	描述	数据表
IBM13Q32734BCA-10T	ETC	获取价格	x72 SDRAM Module
IBM13Q32734BCA-10Y	ETC	获取价格	x72 SDRAM Module
IBM13Q8734HCA-10T	ETC	获取价格	x72 SDRAM Module
IBM13Q8739CC-10Y	IBM	获取价格	Synchronous DRAM, 8MX72, 11.3ns, CMOS, DIMM-200
IBM13T1649NC-10T	ETC	获取价格	x64 SDRAM Module
IBM13T1649NC-12T	ETC	获取价格	x64 SDRAM Module
IBM13T16644NPA-10T	ETC	获取价格	x72 SDRAM Module
IBM13T16644NPA-360T	ETC	获取价格	x72 SDRAM Module
IBM13T2649JC-10T	ETC	获取价格	x64 SDRAM Module
IBM13T2649JC-12T	ETC	获取价格	x64 SDRAM Module

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