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IBM13T8644HPC-10T PDF预览

IBM13T8644HPC-10T

更新时间: 2024-10-28 23:57:39
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
17页 302K
描述
x64 SDRAM Module

IBM13T8644HPC-10T 数据手册

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Discontinued (8/99 - last order; 12/99 - last ship)  
IBM11M4730C4M  
x 72 E12/10, 5.0V, Au.  
IBM13T8644HPB  
IBM13T8644HPC  
8M x 64 SDRAM SO DIMM  
Features  
• 144 Pin JEDEC Standard, 8 Byte Small Outline  
Dual-In-line Memory Module  
• Programmable Operation:  
- CAS Latency: 2, 3  
- Burst Type: Sequential or Interleave  
- Burst Length: 1, 2, 4, 8, Full-Page (Full-  
Page supports Sequential burst only)  
- Operation: Burst Read and Write or Multiple  
Burst Read with Single Write  
• 8Mx64 Synchronous DRAM SO DIMM  
• Low Power  
• Performance:  
-360  
3
-10  
3
Units  
• Data Mask for Byte Read/Write control  
• Auto Refresh (CBR) and Self Refresh  
• Automatic and controlled Precharge Commands  
• Suspend Mode and Power Down Mode  
• 12/9/2 Addressing (Row/Column/Bank)  
• 4096 refresh cycles distributed across 64ms  
• Serial Presence Detect  
CAS Latency  
f
t
t
Clock Frequency  
Clock Cycle  
100  
100  
MHz  
ns  
CK  
CK  
AC  
10  
6
10  
7
Clock Access Time  
ns  
• Inputs and outputs are LVTTL (3.3V) compatible  
• Single 3.3V ± 0.3V Power Supply  
• Single Pulsed RAS interface  
• Card size:  
- 2.66" x 1.15" x 0.149" (IBM13T8644HPB)  
• SDRAMs have 4 internal banks  
• Fully Synchronous to positive Clock Edge  
- 2.66" x 1.05" x 0.149" (IBM13T8644HPC)  
• Gold contacts  
• SDRAMS in TSOP Type II Package  
Description  
IBM13T8644HPB and IBM13T8644HPC are  
144-pin Synchronous DRAM Small Outline Dual  
In-line Memory Modules (SO DIMMs) organized as  
8Mx64 high-speed memory arrays. These SO  
DIMMs use eight 8Mx8 SDRAMs in 400mil TSOP II  
packages. They achieve high speed data transfer  
rates of up to 100MHz by employing a prefetch/pipe-  
line hybrid architecture that supports the JEDEC 1N  
rule while allowing very low burst power.  
necessary timings for each operation. A 12 bit  
address bus accepts address information in a  
row/column multiplexing arrangement.  
Prior to any access operation, the CAS latency,  
burst type, burst length, and burst operation type  
must be programmed into the SO DIMM by address  
inputs A0-A9 during the Mode Register Set cycle.  
The SO DIMM uses serial presence detects imple-  
mented via a serial EEPROM using the two pin IIC  
protocol. The first 128 bytes of serial PD data are  
used by the DIMM manufacturer. The last 128 bytes  
are available to the customer.  
The SO DIMM is intended to comply with all JEDEC  
standards set for 144 pin SDRAM SO DIMMs.  
All control, address, and data input/output circuits  
are synchronized with the positive edge of the exter-  
nally supplied clock inputs. All inputs are sampled at  
the positive edge of each externally supplied clock  
(CK0, CK1). Internal operating modes are defined  
by combinations of the RAS, CAS, WE, S0, DQMB,  
and CKE0 signals. A command decoder initiates the  
All IBM 144-pin SO DIMMs provide a high perfor-  
mance, flexible 8-byte interface in a 2.66" long  
space-saving footprint. Related products are in the  
EDO DRAM SO DIMM family.  
Card Outline  
(Front)  
(Back)  
1
2
143  
144  
59  
60  
61  
62  
01L5951.E24562B  
5/99  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  

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