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IBM13T8644MPE-360T PDF预览

IBM13T8644MPE-360T

更新时间: 2024-10-28 23:57:39
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
17页 290K
描述
x64 SDRAM Module

IBM13T8644MPE-360T 数据手册

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Discontinued (4/1/00 last order; 7/31/00 - last ship)  
.
IBM13T8644MPE  
Preliminary  
Features  
• 144 Pin JEDEC Standard, 8 Byte Small Outline  
Dual-In-line Memory Module  
8M x 64 PC100 SDRAM SO DIMM  
• Programmable Operation:  
- CAS Latency: 2, 3  
• 8Mx64 Synchronous DRAM SO DIMM  
• Performance: PC100  
- Burst Type: Sequential or Interleave  
- Burst Length: 1, 2, 4, 8, Full-Page (Full-  
Page supports Sequential burst only)  
- Operation: Burst Read and Write or Multiple  
Burst Read with Single Write  
-360  
3
Units  
CAS Latency  
f
t
t
Clock Frequency  
Clock Cycle  
100  
MHz  
ns  
CK  
CK  
AC  
• Auto Refresh (CBR) and Self Refresh  
• Automatic and controlled Precharge Commands  
• Suspend Mode and Power Down Mode  
• 12/8/2 Addressing (Row/Column/Bank)  
• 4096 refresh cycles distributed across 64ms  
• Serial Presence Detect  
10  
6
Clock Access Time  
ns  
• Inputs and outputs are LVTTL (3.3V) compatible  
• 10 Ohm Resistors on DQ’s  
• Single 3.3V ± 0.3V Power Supply  
• Single Pulsed RAS interface  
• SDRAMs have 4 internal banks  
• Card size: 2.66" x 1.25" x 0.149"  
• Gold contacts  
• Fully Synchronous to positive Clock Edge  
• Data Mask for Byte Read/Write control  
• SDRAMS in TSOP Type II Package  
Description  
IBM13T8644MPE is a 144-pin Synchronous DRAM  
Small Outline Dual In-line Memory Module (SO -  
DIMM) which is organized as a 8Mx64 high-speed  
memory array. The SO DIMM uses eight 4Mx16  
SDRAMs in 400mil TSOP II packages. The SO -  
DIMM achieves high speed data transfer rates of up  
to 100MHz by employing a prefetch/pipeline hybrid  
architecture that supports the JEDEC 1N rule while  
allowing very low burst power.  
RAS, CAS, WE, S0, S1, DQMB, and CKE0, CKE1,  
signals. A command decoder initiates the necessary  
timings for each operation. A 12 bit address bus  
accepts address information in a row/column multi-  
plexing arrangement.  
Prior to any access operation, the CAS latency,  
burst type, burst length, and burst operation type  
must be programmed into the SO DIMM by address  
inputs A0-A9 during the Mode Register Set cycle.  
The SO DIMM is intended to comply with all JEDEC  
and INTEL PC100 rev 1.2 standards set for 144 pin  
SDRAM SO DIMMs.  
The SO DIMM uses serial presence detects imple-  
mented via a serial EEPROM using the two pin IIC  
protocol. The first 128 bytes of serial PD data are  
used by the DIMM manufacturer. The last 128 bytes  
are available to the customer.  
All control, address, and data input/output circuits  
are synchronized with the positive edge of the exter-  
nally supplied clock inputs.  
All IBM 144-pin SO DIMMs provide a high perfor-  
mance, flexible 8-byte interface in a 2.66" long  
space-saving footprint.  
All inputs are sampled at the positive edge of each  
externally supplied clock (CK0, CK1). Internal oper-  
ating modes are defined by combinations of the  
Card Outline  
(Front)  
(Back)  
1
2
143  
144  
59  
60  
61  
62  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
45L7072.E93888B  
5/99  

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