Datasheet > IBM13N64734HCA-75AT

IBM13N64734HCA-75AT

更新时间： 2024-10-29 20:07:23

品牌	Logo	应用领域
国际商业机器公司 - IBM		时钟动态存储器内存集成电路
页数	文件大小	规格书
18页	328K
描述
Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168

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IBM13N64734HCA-75AT 技术参数

生命周期：	Obsolete	零件包装代码：	DIMM
包装说明：	DIMM, DIMM168	针数：	168
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.36	风险等级：	5.84
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	5.4 ns
最大时钟频率 (fCLK)：	133 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-XDMA-N168	内存密度：	4831838208 bit
内存集成电路类型：	SYNCHRONOUS DRAM MODULE	内存宽度：	72
功能数量：	1	端口数量：	1
端子数量：	168	字数：	67108864 words
字数代码：	64000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	64MX72	输出特性：	3-STATE
封装主体材料：	UNSPECIFIED	封装代码：	DIMM
封装等效代码：	DIMM168	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	电源：	3.3 V
认证状态：	Not Qualified	刷新周期：	8192
最大待机电流：	0.036 A	子类别：	DRAMs
最大压摆率：	1.98 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子节距：	1.27 mm	端子位置：	DUAL
Base Number Matches：	1

IBM13N64734HCA-75AT 数据手册

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IBM13N64644HCA

IBM13N64734HCA

Preliminary

Features

64M x 64/72 Two-Bank Unbuffered SDRAM Module

• 168-Pin Unbuffered 8-Byte Dual In-Line Memory

• Automatic and controlled Precharge commands

• Programmable Operation:

Module

• 64Mx64/72 Synchronous DRAM DIMM

• Intended for PC133 applications

- CAS Latency: 3

- Burst Type: Sequential or Interleave

- Burst Length: 1, 2, 4, 8, Full-Page (Full-

Page supports Sequential burst only)

- Operation: Burst Read and Write or Multiple

Burst Read with Single Write

• Clock Frequency: 133MHz

• Clock Cycle: 7.5ns

• Clock Assess Time: 5.4ns

• Suspend Mode and Power Down Mode

• 13/10/2 Addressing (Row/Column/Bank)

• 8192 Refresh cycles distributed across 64ms

• Serial Presence Detect with Write Protect

• Card size: 5.25" x 1.375" x 0.158" max

• Gold contacts

• Inputs and outputs are LVTTL (3.3V) compatible

• Single 3.3V ± 0.3V Power Supply

• Single Pulsed RAS interface

• SDRAMs have 4 internal banks

• Module has 2 Physical banks

• Fully Synchronous to positive Clock Edge

• Data Mask for Byte Read/Write control

• Auto Refresh (CBR) and Self Refresh

• DRAMs in TSOP Type II Package

Description

IBM13N64644HCA / IBM13N64734HCA are unbuf-

fered 168-pin Synchronous DRAM Dual In-Line

Memory Modules (DIMMs) which are organized as

64Mx64 and 64Mx72 high-speed memory arrays

and are configured as two 32M x 64/72 physical

banks. The DIMMs use sixteen (64Mx64) or eigh-

teen(64Mx72) 32Mx8 SDRAMs in 400mil TSOP II

packages. The DIMMs achieve high-speed data-

transfer rates of up to 133MHz by employing a

prefetch/pipeline hybrid architecture that supports

the JEDEC 1N rule while allowing very low burst

power.

A command decoder initiates the necessary timings

for each operation. A 15-bit address bus accepts

address information in a row/column multiplexing

arrangement.

Prior to any Access operation, the CAS latency,

burst type, burst length, and burst operation type

must be programmed into the DIMM by address

inputs A0-A9 during the Mode Register Set cycle.

The DIMM uses serial presence detects imple-

mented via a serial EEPROM using the two pin IIC

protocol. The first 128 bytes of serial PD data are

used by the DIMM manufacturer. The last 128 bytes

are available to the customer.

All control, address, and data input/output circuits

are synchronized with the positive edge of the exter-

nally supplied clock inputs.

All IBM 168-pin DIMMs provide a high-performance,

flexible 8-byte interface in a 5.25” long space-saving

footprint. Related products include both EDO DRAM

and SDRAM unbuffered DIMMs in both non-parity

x64 and ECC-Optimized x72 configurations.

All inputs are sampled at the positive edge of each

externally supplied clock (CK0 - CK3). Internal oper-

ating modes are defined by combinations of RAS,

CAS, WE, S0-S3, DQMB, and CKE0-CKE1 signals.

Card Outline

(Front)

(Back)

10 11

94 95

40 41

124 125

168

09K3608.F38386

7/99

Use is further subject to the provisions at the end of this document.

Page 1 of 18

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与IBM13N64734HCA-75AT相关器件

型号	品牌	获取价格	描述	数据表
IBM13N8644HCB-260T	ETC	获取价格	x64 SDRAM Module
IBM13N8644HCB-360T	ETC	获取价格	x64 SDRAM Module
IBM13N8644HCB-75AT	ETC	获取价格	x64 SDRAM Module
IBM13N8644HCC-10T	IBM	获取价格	Synchronous DRAM Module, 8MX64, 9ns, CMOS, DIMM-168
IBM13N8644HCC-260T	IBM	获取价格	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168
IBM13N8644HCC-360T	IBM	获取价格	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168
IBM13N8734HCB-260T	ETC	获取价格	x72 SDRAM Module
IBM13N8734HCB-360T	ETC	获取价格	x72 SDRAM Module
IBM13N8734HCB-75AT	ETC	获取价格	x72 SDRAM Module
IBM13N8734HCC-10T	ETC	获取价格	x72 SDRAM Module

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