Datasheet > IAUCN04S7N004

IAUCN04S7N004

更新时间： 2024-03-03 10:08:33

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	776K
描述
A portfolio of 16 products (RDS (on)?max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

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IAUCN04S7N004 数据手册

OptiMOS™ 7 Automotive Power MOSFET, 40 V

IAUCN04S7N004

Values

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Dynamic characteristics²⁾

C _iss

C _oss

C_rss

t _d(on)

t _r

Input capacitance

–

8700

5100

165

11310 pF

6630

V _GS=0 V, V _DS=20 V, f =1 MHz

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

250

–

V _DD=20 V, V _GS=10 V, I _D=88 A,

R _G=3.5 Ω

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics²⁾

Q _gs

Gate to source charge

–

169

–

Q _gd

Gate to drain charge

Gate charge total

V _DD=20 V, I _D=88 A,

V _GS=0 to 10 V

Q _g

130

4.0

V _plateau

Gate plateau voltage

Reverse Diode

Diode continous forward current²⁾

I _S

T _C=25 °C

–

175

Diode pulse current²⁾

I _S,pulse

T _C=25 °C, t _p= 100 µs

1800

V _SD

V _GS=0 V, I _F=88 A, T _j=25 °C

Diode forward voltage

–

0.8

0.95

Reverse recovery time²⁾

Reverse recovery charge²⁾

t _rr

–

V _R=20 V, I _F=50A,

di _F/dt =100 A/µs

Q _rr

138 nC

¹⁾Practically the current is limited by the overall system design including the customer-specific PCB.

²⁾The parameter is not subject to production testing – specified by design.

³⁾Current is not limited by chip.

⁴⁾Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.

Data Sheet

Rev 1.0

2023-05-30

1 2 3 456 7 8...12

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