Datasheet > HYE25L128160AC-8*

HYE25L128160AC-8*

更新时间： 2024-09-27 23:57:19

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
49页	291K
描述
?128M (8Mx16) 125MHz 2-2-2 Ext. Temp. ?

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HYB/E 25L128160AC

128-MBit Mobile-RAM

128-MBit Synchronous Low-Power DRAM in Chipsize Packages

Datasheet (Rev. 12/01)

• Automatic and Controlled Precharge

Command

High Performance:

-7.5 -8

Units

• Programmable Burst Length: 1, 2, 4, 8 and

full page

f_CK,MAX

t_CK3,MIN

t_AC3,MAX

t_CK2,MIN

t_AC2,MAX

133 125 MHz

• Programmable Power Reduction Feature by

partial array activation during Self-Refresh

7.5

5.4

9.5

• Data Mask for byte control

9.5

• Auto Refresh (CBR)

• 4096 Refresh Cycles / 64ms

• Self Refresh with programmble refresh period

• Power Down and Clock Suspend Mode

• 8Mbit x 16 organisation

• VDD = 2.5V, VDDQ = 1.8V / 2.5V

• Fully Synchronous to Positive Clock Edge

• Four Banks controlled by BA0 & BA1

• Programmable CAS Latency: 1, 2, 3

• Random Column Address every CLK

(1-N Rule)

• 54-FBGA , with 9 x 6 ball array with 3

depopulated rows, 9 x 8 mm

• Programmable Wrap Sequence: Sequential

or Interleave

• Operating Temperature Range

Commerical ( 0⁰to 70⁰C)

Extended ( -25^oC to +85^oC)

• Deep Power Down Mode

The HYB/E 25L128160AC Mobile-RAMs are a new generation of low power, four bank

Synchronous DRAM’s organized as 4 banks × 2Mbit x16 with additional features for mobile

applications. These synchronous Mobile-RAMs achieve high speed data transfer rates by

employing a chip architecture that prefetches multiple bits and then synchronizes the output data to

a system clock. The chip is fabricated using the Infineon advanced process technology.

The device adds new features to the industry standards set for synchronous DRAM products.

Parts of the memory array can be selected for Self-Refresh and the refresh period during Self-

Refresh is programmable in 4 steps which drastically reduces the self refresh current, depending on

the case temperature of the components in the system application. In addition a “Deep Power Down

Mode” is available. Operating the four memory banks in an interleave fashion allows random access

operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst

length, CAS latency and speed grade of the device. The device operates from a 2.5V power supply

for the core and 1.8V for the bus interface.

The Mobile-RAM is housed in a FBGA “chip-size” package. The Mobile-RAM is available in the

commercial (0⁰to 70⁰C) and Extended( -25^oC to +85^oC) temperature range.

INFINEON Technologies

12/01

12 3 4 5 6 7...49

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与HYE25L128160AC-8*相关器件

型号	品牌	获取价格	描述	数据表
HYE25L128800AC-7.5	INFINEON	获取价格	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54
HYE25L128800AC-8	INFINEON	获取价格	Synchronous DRAM, 16MX8, 6ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54
HYE25L256160AC	INFINEON	获取价格	256-Mbit Mobile-RAM
HYE25L256160AC-7.5	QIMONDA	获取价格	256-MBit Mobile-RAM
HYE25L256160AC-7.5	INFINEON	获取价格	BJAWBMSpecialty DRAMs Mobile-RAM
HYE25L256160AC-7.5*	ETC	获取价格	?256M (16Mx16) 133MHz 3-3-3 Ext. Temp.?
HYE25L256160AC-75	INFINEON	获取价格	256-Mbit Mobile-RAM
HYE25L256160AC-8	INFINEON	获取价格	256-Mbit Mobile-RAM
HYE25L256160AC-8*	ETC	获取价格	?256M (16Mx16) 125MHz 2-2-2 Ext. Temp. ?
HYE25L256160AF	INFINEON	获取价格	256MBit Mobile-RAM

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