5秒后页面跳转
HY5Y5A6DF-PF PDF预览

HY5Y5A6DF-PF

更新时间: 2024-01-18 17:37:16
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
23页 386K
描述
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54

HY5Y5A6DF-PF 技术参数

生命周期:Obsolete包装说明:FBGA, BGA54,9X9,32
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:7 ns最大时钟频率 (fCLK):105 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:S-PBGA-B54内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
端子数量:54字数:16777216 words
字数代码:16000000最高工作温度:70 °C
最低工作温度:-25 °C组织:16MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, FINE PITCH
电源:3/3.3 V认证状态:Not Qualified
刷新周期:8192连续突发长度:1,2,4,8,FP
最大待机电流:0.00035 A子类别:DRAMs
最大压摆率:0.165 mA表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

HY5Y5A6DF-PF 数据手册

 浏览型号HY5Y5A6DF-PF的Datasheet PDF文件第17页浏览型号HY5Y5A6DF-PF的Datasheet PDF文件第18页浏览型号HY5Y5A6DF-PF的Datasheet PDF文件第19页浏览型号HY5Y5A6DF-PF的Datasheet PDF文件第20页浏览型号HY5Y5A6DF-PF的Datasheet PDF文件第22页浏览型号HY5Y5A6DF-PF的Datasheet PDF文件第23页 
HY5Y5A6DF-xF  
Special Operation for Low Power Consumption  
Deep Power Down Mode  
Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole mem-  
ory array of the devices.  
Data will not be retained once the device enters Deep Power Down Mode.  
Full initialization is required when the device exits from Deep Power Down Mode.  
Truth Table  
Current State  
Idle  
CS  
Command  
CKEn-1  
CKEn  
RAS  
CAS  
WE  
Deep Power  
Down Entry  
H
L
L
H
H
L
Deep Power  
Down  
Deep Power  
Down Exit  
L
H
X
X
X
X
Deep Power Down Mode Entry  
The Deep Power Down Mode is entered by having /CS and /WE held low with /RAS and /CAS high at the rising edge of the  
clock, while CKE is low. The following diagram illustrates deep power down mode entry.  
CLK  
CKE  
CS  
RAS  
CAS  
WE  
tRP  
Precharge  
if needed  
Deep Power Down Entry  
Rev. 0.2 / June. 2003  
21  

与HY5Y5A6DF-PF相关器件

型号 品牌 获取价格 描述 数据表
HY5Y5A6DFP-HF HYNIX

获取价格

DRAM
HY5Y5A6DF-SF HYNIX

获取价格

Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
HY5Y5A6DLF-HF HYNIX

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54
HY5Y5A6DLF-PF HYNIX

获取价格

Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
HY5Y5A6DLFP-HF HYNIX

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54
HY5Y5A6DLF-SF HYNIX

获取价格

Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
HY5Y5A6DSF-HF HYNIX

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54
HY5Y5A6DSFP-HF HYNIX

获取价格

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54
HY5Y5A6DSF-SF HYNIX

获取价格

Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
HY5Y6B6DLF-HF HYNIX

获取价格

4Banks x1M x 16bits Synchronous DRAM