是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA90,9X15,32 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最长访问时间: | 5.4 ns |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | R-PBGA-B90 |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 32 | 端子数量: | 90 |
字数: | 8388608 words | 字数代码: | 8000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8MX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA90,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.22 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY5V52CF | ETC |
获取价格 |
8Mx32|3.3V|8K|H/8/P/S|SDR SDRAM - 256M | |
HY5V52CF-P | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | |
HY5V52CF-S | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | |
HY5V52CLF-H | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | |
HY5V52ELM-6 | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FB | |
HY5V52ELM-6I | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FB | |
HY5V52ELM-HI | HYNIX |
获取价格 |
暂无描述 | |
HY5V52ELMP-6I | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LE | |
HY5V52ELMP-H | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LE | |
HY5V52ELMP-HI | HYNIX |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LE |