Datasheet > HXS50-SP2

HXS50-SP2

更新时间： 2024-11-21 03:13:47

品牌	Logo	应用领域
莱姆 - LEM		传感器
页数	文件大小	规格书
3页	294K
描述
Current Transducer

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HXS50-SP2 数据手册

Current Transducer HXS 50-NP/SP2

I_PN= 12.5 - 25 - 50 A

For the electronic measurement of currents : DC, AC, pulsed, mixed,

with a galvanic isolation between the primary circuit (high power)

and the secondary circuit (electronic circuit).

All Data are given with a R_L= 10 kW

Features

Electrical data

· Hall effect measuring principle

· Multirange current transducer

through PCB pattern lay-out

· Galvanic isolation between primary

and secondary circuit

I_PN

I_P

V_OUT

Primary nominal r.m.s. current

Primary current measuring range

Analog output voltage @ I_P

I_P= 0

± 50

± 150

V_REF±(0.625·I_P/I_PN) V

V_REF± 0.0125

V_REF

Internal Reference ¹⁾- Output voltage

2.5 ± 0.025

· Isolation test voltage 3500V

· Low power consumption

· Extremely low profile, < 11mm

· Single power supply +5V

· Fixed offset & gain

V_REFOutput impedance

V_REFLoad impedance

Output load resistance

Output impedance

Max. output capacitive load

Supply voltage (± 5 %)

typ. 200

³ 200

³ 2

< 10

< 1

µF

R_L

R_OUT

C_L

V_C

· Insulated plastic case recognized

according to UL 94-V0.

I_C

Current consumption @ V_C= 5 V

Accuracy - Dynamic performance data

Special Feature

Accuracy ²⁾@ I_PN, T_A= 25°C

Linearity error 0.. I_PN

.. 3 x I_PN

£ ± 1

£ ± 0.5

£ ± 1

£ ± 0.4

£ ± 0.01

£ ± 0.2

% of I_PN

mV/K

%/K

mV/K

· T_A= -40 .. +105 °C

TCV_OUTThermal drift of V_OUT@ I_P= 0

TCV_REFThermal drift of V_REF

TCV_OUT/V_REFThermal drift of V_OUT/ V_REF@ I_P= 0

Advantages

· Small size and space saving

· Only one design for wide current

ratings range

· High immunity to external

interference.

TCe Thermal drift of the gain

£ ± 0.05% of reading/K

V_OM

t_ra

t_r

Residual voltage@ I_P= 0, after an overload of 3 x I_{PN DC}< ± 1

% of I_PN

µs

Reaction time @ 10 % of I_PN

Response time @ 90 % of I_PN

< 3

< 5

> 50

< 20

< 40

DC .. 50

µs

di/dt di/dt accurately followed

A/µs

mVpp

kHz

· Internal & external reference

V_no

Output noise(DC ..10 kHz)

(DC .. 1 MHz)

Frequency bandwidth (-3 dB) ³⁾

Applications

· AC variable speed drives

· Static converters for DC motor drives

· Battery supplied applications

· Uninterruptible Power Supplies

(UPS)

General data

T_A

T_S

Ambient operating temperature

Ambient storage temperature

Mass

- 40 .. + 105

°C

Standards

EN 50178 (97-10-01)

· Switched Mode Power Supplies

(SMPS)

· Power supplies for welding

applications.

Notes : ¹⁾It is possible to overdrive V_REFwith an external reference voltage

between 2 - 2.8 V providing its ability to sink or source approximately

2.5 mA.

ApplicationDomain

· Industrial

²⁾Excluding offset and hysteresis.

³⁾Small signal only to avoid excessive heatings of the magnetic core.

Page 1/3

LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.

061004/10

www.lem.com

12 3

中文翻译

下载PDF

与HXS50-SP2相关器件

型号	品牌	获取价格	描述	数据表
HX-SCE-1K-12.7-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-19.0-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-2.4-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-25.4-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-3.2-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-38.1-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-4.8-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-4.8-50-S1-4	MACOM	获取价格	Wire and Harness ID Products
HX-SCE-1K-6.4-50	TE	获取价格	tyco electronics contents
HX-SCE-1K-9.5-50	TE	获取价格	tyco electronics contents

与HXS50-SP2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

HXS50-SP2

HXS50-SP2 数据手册

与HXS50-SP2相关器件

与HXS50-SP2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HXS50-SP2

HXS50-SP2 数据手册

与HXS50-SP2相关器件

与HXS50-SP2相关文章

您还可以找

您在本页遇到什么问题？