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HXSR01632-QN PDF预览

HXSR01632-QN

更新时间: 2024-09-23 20:38:59
品牌 Logo 应用领域
霍尼韦尔 - HONEYWELL 静态存储器内存集成电路
页数 文件大小 规格书
14页 945K
描述
Standard SRAM,

HXSR01632-QN 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
内存集成电路类型:STANDARD SRAMBase Number Matches:1

HXSR01632-QN 数据手册

 浏览型号HXSR01632-QN的Datasheet PDF文件第2页浏览型号HXSR01632-QN的Datasheet PDF文件第3页浏览型号HXSR01632-QN的Datasheet PDF文件第4页浏览型号HXSR01632-QN的Datasheet PDF文件第5页浏览型号HXSR01632-QN的Datasheet PDF文件第6页浏览型号HXSR01632-QN的Datasheet PDF文件第7页 
HXSR01632  
512K x 32 STATIC RAM  
The monolithic 512k x 32 Radiation Hardened Static  
RAM is a high performance 524,288 word x 32-bit  
static random access memory, fabricated with  
Honeywell’s 150nm silicon-on-insulator CMOS  
(S150) technology. It is designed for use in low  
voltage systems operating in radiation environments.  
The SRAM operates over the full military temperature  
range and requires a core supply voltage of 1.8V and  
supports I/O supply voltages of 2.5V and 3.3V. It is  
available in package and bare die form.  
Honeywell’s S150 technology is radiation hardened  
through the use of advanced and proprietary design,  
layout and process hardening techniques. There is  
no internal ECC implemented.  
The memory cell is single event upset hardened,  
while four layer metal power busing and small  
collection volumes of SOI provides superior single  
event effect and dose rate hardening.  
It is a low power process with a minimum drawn  
feature size of 150nm. This delivers high speed  
typical READ cycle time of 15ns, WRITE cycle time  
of 9ns and low power consumption of 300mW at  
40MHz.  
FEATURES  
Fabricated on S150 Silicon On  
Insulator (SOI) CMOS  
Total Dose 1x106 rad(Si)  
Latchup Immune  
Soft Error Rate  
Core Operating Voltage  
150nm Process (Leff = 110nm)  
Heavy Ion 1x10-12 upsets/bit-day  
1.8V  
Proton  
2x10-12 upsets/bit-day  
High Speed  
I/O Voltages  
9ns Typical Write Cycle  
15ns Typical Read Cycle  
Neutron Irradiation 1x1014 n/cm2  
2.5V or 3.3V  
Dose Rate Upset  
Operating Temperature Range  
1x1010 rad(Si)/s  
-55°C to +125°C  
Asynchronous Operation  
CMOS Compatible I/O  
Dose Rate Survivability  
86-Lead Ceramic Flat Pack  
1x1012 rad(Si)/s  
Package  

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