Datasheet > HXSR01608AYN

HXSR01608AYN

更新时间： 2024-11-22 04:45:39

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		静态存储器
页数	文件大小	规格书
11页	258K
描述
IC 2M X 8 STANDARD SRAM, CDFP40, CERAMIC, DFP-40, Static RAM

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HXSR01608AYN 数据手册

HXSR01608

2M x 8 STATIC RAM

The monolithic, radiation hardened 16M bit Static

Random Access Memory (SRAM) in a 2M x 8

configuration is a high performance 2,097,152 word x 8

bit SRAM fabricated with Honeywell’s 150nm silicon-

on-insulator CMOS (S150) technology. It is designed

for use in low voltage systems operating in radiation

sensitive environments. The RAM operates over the full

military temperature range and requires a core supply

voltage of 1.8V +/- 0.15V and an I/O supply voltage of

3.3V ± 0.3V or 2.5V ± 0.2V.

proprietary design, layout and process hardening

techniques. There is no internal EDAC implemented.

It is a low power process with a minimum drawn feature

size of 150 nm. Less than 150mW typical power at

40MHz operation. The SRAM is fully asynchronous

with a typical access time of 13 ns at 3.3V. A seven

transistor (7T) memory cell is used for superior single

event upset hardening, while four layer metal power

busing and the low collection volume SOI substrate

provide improved dose rate hardening.

Honeywell’s state-of-the-art S150 technology is

radiation hardened through the use of advanced and

FEATURES

· Fabricated on S150 Silicon On

Insulator (SOI) CMOS

· Total Dose =1X10⁶rad(Si)

· Soft Error Rate

· Core Power Supply

1.8 V ± 0.15 V

Heavy Ion =1x10^-12Upsets/bit-day

Proton = 2x10^-12Upsets/bit-day

· 150 nm Process (Leff = 110 nm)

· I/O Power Supply

3.3 V ± 0.3 V

· Read Cycle Times

Typical =13 ns

2.5 V ± 0.2 V

· Neutron =1x10¹⁴cm^-2

Worst case = 20 ns

· CMOS Compatible I/O

· Dose Rate Upset

=1x10¹⁰rad(Si)/s

· Write Cycle Times

Typical = 9 ns

· Operating Range is

-55°C to +125°C

· Dose Rate Survivability

Worst case = 12 ns

=1x10¹²rad(Si)/s

· 40-Lead Flat Pack Package

· Asynchronous Operation

· No Latchup

12 3 4 5 6 7...11

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与HXSR01608AYN相关器件

型号	品牌	获取价格	描述	数据表
HXSR01608AZN	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CDFP40, CERAMIC, DFP-40
HXSR01608-EH	HONEYWELL	获取价格	IC 2M X 8 STANDARD SRAM, CUUC3, CERAMIC, DIE-3, Static RAM
HXSR01608-EN	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CUUC3, CERAMIC, DIE-3
HXSR01608-QN	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CUUC3, CERAMIC, DIE-3
HXSR01608-VH	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CUUC3, CERAMIC, DIE-3
HXSR01608-VN	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CUUC3, CERAMIC, DIE-3
HXSR01608-YN	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CUUC3, CERAMIC, DIE-3
HXSR01608-ZN	HONEYWELL	获取价格	Standard SRAM, 2MX8, CMOS, CUUC3, CERAMIC, DIE-3
HXSR01632DQN	HONEYWELL	获取价格	Standard SRAM, 512KX32, 22ns, CMOS, CDFP86, DFP-86
HXSR01632DVH	HONEYWELL	获取价格	Standard SRAM, 512KX32, 22ns, CMOS, PDFP86, CERAMIC, DFP-86