Datasheet > HXSR01632DQN

HXSR01632DQN

更新时间： 2023-01-03 07:16:48

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		静态存储器
页数	文件大小	规格书
14页	945K
描述
Standard SRAM, 512KX32, 22ns, CMOS, CDFP86, DFP-86

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HXSR01632DQN 数据手册

HXSR01632

512K x 32 STATIC RAM

The monolithic 512k x 32 Radiation Hardened Static

RAM is a high performance 524,288 word x 32-bit

static random access memory, fabricated with

Honeywell’s 150nm silicon-on-insulator CMOS

(S150) technology. It is designed for use in low

voltage systems operating in radiation environments.

The SRAM operates over the full military temperature

range and requires a core supply voltage of 1.8V and

supports I/O supply voltages of 2.5V and 3.3V. It is

available in package and bare die form.

Honeywell’s S150 technology is radiation hardened

through the use of advanced and proprietary design,

layout and process hardening techniques. There is

no internal ECC implemented.

The memory cell is single event upset hardened,

while four layer metal power busing and small

collection volumes of SOI provides superior single

event effect and dose rate hardening.

It is a low power process with a minimum drawn

feature size of 150nm. This delivers high speed

typical READ cycle time of 15ns, WRITE cycle time

of 9ns and low power consumption of 300mW at

40MHz.

FEATURES

 Fabricated on S150 Silicon On

Insulator (SOI) CMOS

 Total Dose 1x10⁶rad(Si)

 Latchup Immune

 Soft Error Rate

 Core Operating Voltage

 150nm Process (Leff = 110nm)

Heavy Ion 1x10^-12upsets/bit-day

1.8V

Proton

2x10^-12upsets/bit-day

 High Speed

 I/O Voltages

9ns Typical Write Cycle

15ns Typical Read Cycle

 Neutron Irradiation 1x10¹⁴n/cm²

2.5V or 3.3V

 Dose Rate Upset

 Operating Temperature Range

1x10¹⁰rad(Si)/s

-55°C to +125°C

 Asynchronous Operation

 CMOS Compatible I/O

 Dose Rate Survivability

 86-Lead Ceramic Flat Pack

1x10¹²rad(Si)/s

Package

12 3 4 5 6 7...14

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