Datasheet > HX6136TBFT

HX6136TBFT

更新时间： 2024-11-30 15:45:19

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		时钟先进先出芯片内存集成电路
页数	文件大小	规格书
16页	879K
描述
FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, QFP-32

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技术参数
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HX6136TBFT 技术参数

生命周期：	Active	零件包装代码：	DFP
包装说明：	DFP, FL32,.6	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.71	风险等级：	5.1
最长访问时间：	30 ns	最大时钟频率 (fCLK)：	28 MHz
周期时间：	34 ns	JESD-30 代码：	R-CDFP-F32
长度：	20.828 mm	内存密度：	36864 bit
内存集成电路类型：	OTHER FIFO	内存宽度：	36
功能数量：	1	端子数量：	32
字数：	1024 words	字数代码：	1000
工作模式：	SYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	1KX36
可输出：	YES	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装代码：	DFP	封装等效代码：	FL32,.6
封装形状：	RECTANGULAR	封装形式：	FLATPACK
并行/串行：	PARALLEL	电源：	5 V
认证状态：	Not Qualified	筛选级别：	38535Q/M;38534H;883B
座面最大高度：	3.81 mm	最大待机电流：	0.001 A
子类别：	FIFOs	最大压摆率：	0.5 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	FLAT	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	15.24 mm
Base Number Matches：	1

HX6136TBFT 数据手册

FIFO – HX6409/HX6218/HX6136

First-In First-Out Memory

HX6409/HX6218/HX6136

The HX6409, HX6218, and HX6136 are high speed,

low power, first-in first-out memories with clocked read

and write interfaces. The HX6409 is a 4096-word by 9-

bit memory array; the HX6218 is a 2048-word by 18-bit

memory array; and the HX6136 is a 1024-word by 36-

bit memory array. The FIFOs support width expansion

while depth expansion requires external logic control

using state machine techniques. Features include

programmable parity control, an empty/full flag, a

quarter/three quarter full flag, a half full flag and an

error flag.

together for single-clock operation or the two clocks

may be run independently for asynchronous read/write

applications. Clock frequencies up to 28 MHz are

achievable in the three configurations.

Honeywell’s FIFOs provide solutions for a wide variety

of data buffering needs, including high-speed data

acquisition,

multiprocessor

interfaces,

and

communications buffering.

Honeywell’s enhanced SOI RICMOS™ IV (Radiation

Insensitive CMOS) technology is radiation hardened

through the use of advanced and proprietary design,

layout and process hardening techniques. The FIFO is

Input ports are controlled by a free running clock (CKW)

and a write-enable pin ENW . When ENW is

asserted, data is written into the FIFO on the rising

edge of the CKW signal. While ENW is held active,

data is continually written into the FIFO on each CKW

cycle.

fabricated

with

Honeywell’s

radiation-hardened

technology, and is designed for use in systems

operating in radiation environments. The SOI

RICMOS™ IV process is a 5-volt, SOI CMOS

technology with a 150 Å gate oxide and a minimum

drawn feature size of 0.8µm, (0.65µm effective gate

length—L_eff). Additional features include tungsten via

plugs, Honeywell’s proprietary SHARP planarization

process, and a lightly doped drain (LDD) structure.

The output port is controlled in a similar manner by a

free running read clock (CKR) and a read enable pin

( ENR ). In addition, the three FIFOs have an output

enable pin ( OE ) and a master reset pin ( MR ). The

read (CKR) and write ( CKW ) clocks may be tied

FEATURES

. 1K x 36, 2K x 18, 4K x 9

configurations

. Dynamic and static transient

upset hardness through 1x10⁹

. Empty, full, half full, 1/4 full,

¾ full, error flags

. Fabricated with RICMOS™ IV

Silicon on Insulator (SOI) 0.8

µm process (Leff = 0.65µm)

. Total dose hardness through

1x10⁶rad(Si)

rad(Si)/s

. Parity generation/checking

. Fully asynchronous with

simultaneous read and write

operation

. Dose rate survivability through

1x10¹¹rad(Si)/s

. Soft error rate of <1x10^-10

upsets/bit-day

. Output enable (OE)

. Neutron hardness through

. No latchup

. CMOS or TTL compatible I/O

. Single 5V ±10% power supply

. Various flat pack options

1x10¹⁴cm^-2

. Read/write cycle times

36 ns (-55°to 125°C)

. Expandable in Width

www.honeywell.com/radhard

12 3 4 5 6 7...16

中文翻译

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与HX6136TBFT相关器件

型号	品牌	获取价格	描述	数据表
HX6136TEFC	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, DFP-32
HX6136TEFT	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, DFP-32
HX6136TEHC	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, DFP-32
HX6136TEHT	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, DFP-32
HX6136TENC	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, QFP-32
HX6136TENT	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, QFP-32
HX6136TERC	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, DFP-32
HX6136TERT	HONEYWELL	获取价格	FIFO, 1KX36, 30ns, Synchronous, CMOS, CDFP32, CERAMIC, DFP-32
HX6136TQFT	HONEYWELL	获取价格	IC 1K X 36 OTHER FIFO, 30 ns, CDFP32, CERAMIC, QFP-32, FIFO
HX6136TQHC	HONEYWELL	获取价格	IC 1K X 36 OTHER FIFO, 30 ns, CDFP32, CERAMIC, QFP-32, FIFO

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