Datasheet > HUF75339P3

HUF75339P3

更新时间： 2024-11-28 22:48:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关 PC 局域网
页数	文件大小	规格书
9页	111K
描述
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

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替代型号

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HUF75339P3 数据手册

HUF75339G3, HUF75339P3, HUF75339S3S

Data Sheet

June 1999

File Number 4363.5

75A, 55V, 0.012 Ohm, N-Channel UltraFET

Power MOSFETs

Features

• 75A, 55V

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET™ process.

• Simulation Models

- Temperature Compensated PSPICE and SABER

Models

This advanced process technology

- SPICE and SABER Thermal Impedance Models

Available on the WEB at:

www.Intersil.com/families/models.htm

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efﬁciency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA75339.

Ordering Information

PART NUMBER

PACKAGE

BRAND

75339G

HUF75339G3

TO-247

HUF75339P3

TO-220AB

TO-263AB

75339P

75339S

HUF75339S3S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75339S3ST.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(TAB)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

121

12 3 4 5 6 7...9

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HUF75339P3 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF3205Z	INFINEON	功能相似	HEXFET? Power MOSFET
IRF3205ZPBF	INFINEON	功能相似	AUTOMOTIVE MOSFET
IRF3205PBF	INFINEON	功能相似	HEXFET Power MOSFET

与HUF75339P3相关器件

型号	品牌	获取价格	描述	数据表
HUF75339P3_NL	FAIRCHILD	获取价格	暂无描述
HUF75339S3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 70A I(D) \| TO-262AA
HUF75339S3S	FAIRCHILD	获取价格	75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339S3S	INTERSIL	获取价格	75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
HUF75339S3ST	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 75A I(D) \| TO-263AB
HUF75343G3	FAIRCHILD	获取价格	75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343G3	INTERSIL	获取价格	75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343P3	FAIRCHILD	获取价格	75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343P3	INTERSIL	获取价格	75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343P3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Met

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