Datasheet > HUF75344G3_04

HUF75344G3_04

更新时间： 2024-11-29 04:43:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	308K
描述
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

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HUF75344G3_04 数据手册

HUF75344G3, HUF75344P3, HUF75344S3S

Data Sheet

December 2004

75A, 55V, 0.008 Ohm, N-Channel UltraFET

Power MOSFETs

Features

• 75A, 55V

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Models

advanced process technology

- Thermal Impedance PSPICE and SABER Models

Available on the web at: www.fairchildsemi.com

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA75344.

Ordering Information

PART NUMBER

PACKAGE

BRAND

75344G

HUF75344G3

TO-247

HUF75344P3

TO-220AB

TO-263AB

75344P

75344S

HUF75344S3S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(TAB)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2

12 3 4 5 6 7...10

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与HUF75344G3_04相关器件

型号	品牌	获取价格	描述	数据表
HUF75344G3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
HUF75344G3_NL	ROCHESTER	获取价格	75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
HUF75344P3	FAIRCHILD	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344P3	INTERSIL	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344P3	ONSEMI	获取价格	55V、75A、8mΩ、N沟道UltraFET® Power MOSFET
HUF75344P3_NL	ROCHESTER	获取价格	75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
HUF75344S3	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
HUF75344S3S	INTERSIL	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344S3S	FAIRCHILD	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344S3ST	ROCHESTER	获取价格	75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

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