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HUF75344A3 PDF预览

HUF75344A3

更新时间: 2024-11-29 04:43:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 430K
描述
N-Channel UltraFET Power MOSFET 55V, 75A, 8mヘ

HUF75344A3 数据手册

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October 2007  
HUF75344A3  
tm  
N-Channel UltraFET Power MOSFET  
55V, 75A, 8mΩ  
Features  
Description  
RDS(on) = 6.5m( Typ.)@ VGS = 10V, ID = 75A  
This N-channel power MOSFET is produced using Fairchild  
Semiconductor’s innovative UItraFET process. This advanced  
process technology achieves the lowest possible  
on-resistance per silicon area, resulting in outstanding  
performance. This device is capable of withstanding high  
energy in the avalanche mode and the diode exhibits very low  
reverse recovery time and stored change. It was designed for  
use in applications where power efficiency is important, such  
as switching regulators, switching converters, motro drives,  
relay drivers, low-voltage bus switches, and power manage-  
ment in portable and battery-operated products.  
RoHS compliant  
D
G
TO-3PN  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Ratings  
55  
Units  
V
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
±20  
V
-Continuous (TC = 130oC)  
- Pulsed  
75  
A
IDM  
EAS  
Drain Current  
300  
A
Single Pulsed Avalanche Energy  
(Note 1)  
1153  
mJ  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
288.5  
1.92  
PD  
Power Dissipation  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Ratings  
0.52  
Units  
RθJC  
RθJA  
oC/W  
40  
©2007 Fairchild Semiconductor Corporation  
HUF75344A3 Rev. A1  
1
www.fairchildsemi.com  

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