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HUF75345S3S PDF预览

HUF75345S3S

更新时间: 2024-11-28 22:48:27
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
9页 103K
描述
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

HUF75345S3S 数据手册

 浏览型号HUF75345S3S的Datasheet PDF文件第2页浏览型号HUF75345S3S的Datasheet PDF文件第3页浏览型号HUF75345S3S的Datasheet PDF文件第4页浏览型号HUF75345S3S的Datasheet PDF文件第5页浏览型号HUF75345S3S的Datasheet PDF文件第6页浏览型号HUF75345S3S的Datasheet PDF文件第7页 
HUF75345G3, HUF75345P3, HUF75345S3S  
Data Sheet  
June 1999  
File Number 4365.7  
75A, 55V, 0.007 Ohm, N-Channel UltraFET  
Power MOSFETs  
Features  
• 75A, 55V  
These N-Channel power MOSFETs  
are manufactured using the  
innovative UltraFET™ process.  
• Simulation Models  
®
©
- Temperature Compensated PSPICE and SABER  
Models  
This advanced process technology  
- Thermal Impedance SPICE and SABER Models  
Available on the WEB at:  
www.Intersil.com/families/models.htm  
achieves the lowest possible on-resistance per silicon area,  
resulting in outstanding performance. This device is capable  
of withstanding high energy in the avalanche mode and the  
diode exhibits very low reverse recovery time and stored  
charge. It was designed for use in applications where power  
efficiency is important, such as switching regulators,  
switching converters, motor drivers, relay drivers, low-  
voltage bus switches, and power management in portable  
and battery-operated products.  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Formerly developmental type TA75345.  
D
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
75345G  
HUF75345G3  
TO-247  
G
HUF75345P3  
TO-220AB  
TO-263AB  
75345P  
75345S  
S
HUF75345S3S  
NOTE: When ordering, use the entire part number. Add the suffix T to  
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.  
Packaging  
JEDEC STYLE TO-247  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
(TAB)  
JEDEC TO-263AB  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.  
SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
148  

HUF75345S3S 替代型号

型号 品牌 替代类型 描述 数据表
HUF75345S3ST_NL FAIRCHILD

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Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
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HUF75345S3ST FAIRCHILD

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