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HUF75542P3 PDF预览

HUF75542P3

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品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
11页 168K
描述
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

HUF75542P3 数据手册

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HUF75542P3, HUF75542S3S  
TM  
Data Sheet  
June 2000  
File Number 4845.2  
75A, 80V, 0.014 Ohm, N-Channel,  
UltraFET Power MOSFETs  
Packaging  
JEDEC TO-220AB  
JEDEC TO-263AB  
Features  
SOURCE  
DRAIN  
GATE  
• Ultra Low On-Resistance  
- r = 0.014Ω, VGS = 10V  
DS(ON)  
• Simulation Models  
©
- Temperature Compensated PSPICE® and SABER  
Electrical Models  
GATE  
SOURCE  
©
DRAIN  
- Spice and SABER Thermal Impedance Models  
(FLANGE)  
DRAIN (FLANGE)  
HUF75542P3  
- www.intersil.com  
HUF75542S3S  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
Symbol  
Ordering Information  
D
S
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
75542P  
75542S  
HUF75542P3  
G
HUF75542S3S  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the variant in tape and reel, e.g., HUF75542S3ST.  
o
Absolute Maximum Ratings  
T = 25 C, Unless Otherwise Specified  
C
HUF75542P3, HUF75542S3S  
UNITS  
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
80  
80  
V
V
V
DSS  
Drain to Gate Voltage (R  
GS  
= 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±20  
GS  
Drain Current  
o
Continuous (T = 25 C, V  
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
75  
58  
A
A
C
GS  
D
D
o
Continuous (T = 100 C, V  
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
GS  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Figure 4  
DM  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS  
Figures 6, 14, 15  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
230  
1.54  
W
W/ C  
D
o
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 175  
C
STG  
Maximum Temperature for Soldering  
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
300  
260  
C
C
L
o
pkg  
NOTE:  
1. T = 25 C to 150 C.  
o
o
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.  
1
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
SABER© is a Copyright of Analogy Inc.  

HUF75542P3 替代型号

型号 品牌 替代类型 描述 数据表
HUF75542P3 FAIRCHILD

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