是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.66 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 75 A |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.009 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 270 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
HUF75344P3 | FAIRCHILD |
类似代替 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs | |
FQP70N10 | FAIRCHILD |
类似代替 |
100V N-Channel MOSFET | |
STP65NF06 | STMICROELECTRONICS |
功能相似 |
N-channel 60V - 11.5mヘ - 60A - DPAK/TO-220 ST |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HUF75343P3_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Met | |
HUF75343S3 | FAIRCHILD |
获取价格 |
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs | |
HUF75343S3_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.009ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
HUF75343S3S | FAIRCHILD |
获取价格 |
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs | |
HUF75343S3S | INTERSIL |
获取价格 |
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs | |
HUF75343S3ST | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB | |
HUF75344A3 | FAIRCHILD |
获取价格 |
N-Channel UltraFET Power MOSFET 55V, 75A, 8mヘ | |
HUF75344G3 | FAIRCHILD |
获取价格 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs | |
HUF75344G3 | INTERSIL |
获取价格 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs | |
HUF75344G3 | ONSEMI |
获取价格 |
55 V、75 A、8 mΩ、N 沟道 UltraFET 功率 MOSFET |