Datasheet > HUF75343S3S

HUF75343S3S

更新时间： 2024-11-28 22:15:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关
页数	文件大小	规格书
9页	102K
描述
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

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替代型号

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HUF75343S3S 数据手册

HUF75343G3, HUF75343P3, HUF75343S3S

Data Sheet

June 1999

File Number 4352.5

75A, 55V, 0.009 Ohm, N-Channel UltraFET

Power MOSFETs

Features

• 75A, 55V

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET™ process.

• Simulation Models

- Temperature Compensating PSPICE and SABER

Models

This advanced process technology

- Thermal Impedance PSPICE™ and SABER Models

Available on the WEB at:

www.Intersil.com/families/models.htm

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efﬁciency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA75343.

Ordering Information

PART NUMBER

PACKAGE

BRAND

75343G

HUF75343G3

TO-247

HUF75343P3

TO-220AB

TO-263AB

75343P

75343S

HUF75343S3S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(TAB)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7...9

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HUF75343S3S 替代型号

型号	品牌	替代类型	描述	数据表
HUF75343S3S	FAIRCHILD	功能相似	75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

与HUF75343S3S相关器件

型号	品牌	获取价格	描述	数据表
HUF75343S3ST	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 75A I(D) \| TO-263AB
HUF75344A3	FAIRCHILD	获取价格	N-Channel UltraFET Power MOSFET 55V, 75A, 8mヘ
HUF75344G3	FAIRCHILD	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344G3	INTERSIL	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344G3	ONSEMI	获取价格	55 V、75 A、8 mΩ、N 沟道 UltraFET 功率 MOSFET
HUF75344G3_04	FAIRCHILD	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344G3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
HUF75344G3_NL	ROCHESTER	获取价格	75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
HUF75344P3	FAIRCHILD	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344P3	INTERSIL	获取价格	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

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