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HSMS-8101-TR2G PDF预览

HSMS-8101-TR2G

更新时间: 2024-09-13 19:51:51
品牌 Logo 应用领域
安捷伦 - AGILENT 光电二极管
页数 文件大小 规格书
6页 105K
描述
Mixer Diode, X Band to KU Band, Silicon, LEAD FREE, PLASTIC PACKAGE-3

HSMS-8101-TR2G 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.1
配置:SINGLE最大二极管电容:0.26 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:X BAND TO KU BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最大工作频率:14 GHz
最小工作频率:10 GHz最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified子类别:Microwave Mixer Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HSMS-8101-TR2G 数据手册

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Agilent HSMS-8101, 8202, 8207,  
8209 Surface Mount Microwave  
Schottky Mixer Diodes  
Data Sheet  
Features  
• Optimized for use at  
10-14 GHz  
• Low Capacitance  
• Low Conversion Loss  
Plastic SOT-23 Package  
Description/Applications  
These low cost microwave  
Schottky diodes are specifically  
designed for use at X/Ku-bands  
and are ideal for DBS and VSAT  
downconverter applications. They  
are available in SOT-23 and  
SOT-143 standard package  
configurations.  
• Low RD  
• Low Cost Surface Mount  
Plastic Package  
• Lead-free Option Available  
Package Lead Code  
Identification  
(Top View)  
Note that Agilent's manufacturing  
techniques assure that dice found in  
pairs and quads are taken from  
adjacent sites on the wafer, assur-  
ing the highest degree of match.  
Plastic SOT-143 Package  
SINGLE  
3
SERIES  
3
1
2
1
2
#1  
#2  
RING  
QUAD  
CROSS-OVER  
QUAD  
Absolute Maximum Ratings[1], TA = +25°C  
3
4
3
4
Symbol Parameter  
Unit  
Min.  
Max.  
PT  
PIV  
TJ  
Total Device Dissipation[2]  
mW  
V
75  
4
1
2
1
2
Peak Inverse Voltage  
Junction Temperature  
#7  
#9  
°C  
°C  
+150  
+150  
TSTG, Top Storage and Operating  
Temperature  
-65  
Attention:  
Notes:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
1. Operation in excess of any one of these conditions may result in  
permanent damage to the device.  
2. Measured in an infinite heat sink at TCASE = 25°C. Derate linearly to  
zero at 150°C per diode.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  

HSMS-8101-TR2G 替代型号

型号 品牌 替代类型 描述 数据表
HSMS-8101-TR1 AVAGO

功能相似

SILICON, MIXER DIODE
HSMS-8101-TR2G AVAGO

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SILICON, KU BAND, MIXER DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3

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