Datasheet > HSMS-8107-TR2

HSMS-8107-TR2

更新时间： 2024-10-31 05:27:43

品牌	Logo	应用领域
安华高科 - AVAGO		/
页数	文件大小	规格书
6页	96K
描述
SILICON, MIXER DIODE

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HSMS-8107-TR2 数据手册

HSMS-8101, 8202, 8207, 8209

Surface Mount Microwave Schottky Mixer Diodes

Data Sheet

Description/Applications

Features

These low cost microwave Schottky diodes are

specifically designed for use at X/Ku-bands and are

ideal for DBS and VSAT downconverter applications.

They are available in SOT-23 and SOT-143 standard

package configurations.

•

Optimized for use at 10-14 GHz

Low Capacitance

Low Conversion Loss

Low RD

Low Cost Surface Mount Plastic Package

Lead-free Option Available

Note that Avago's manufacturing techniques assure that

dice found in pairs and quads are taken from adjacent

sites on the wafer, assuring the highest degree of match.

Package Lead Code Identification (Top View)

Plastic SOT-23 Package

Plastic SOT-143 Package

SINGLE

SERIES

RING

QUAD

CROSS-OVER

QUAD

Absolute Maximum Ratings^[1], T_A= +25°C

Attention:

Symbol Parameter

Unit

Min.

Max.

Observe precautions for

handling electrostatic

sensitive devices.

P_T

P_IV

T_J

Total Device Dissipation^[2]

—

Peak Inverse Voltage

Junction Temperature

°C

—

+150

ESD Machine Model (Class A)

T_STG, T_opStorage and Operating

Temperature

-65

ESD Human Body Model (Class 0)

Refer to Avago Application Note A004R:

Electrostatic Discharge Damage and Control.

Notes:

1. Operation in excess of any one of these conditions may result in

permanent damage to the device.

2. Measured in an infinite heat sink at T_CASE= 25°C. Derate linearly to

zero at 150°C per diode.

12 3 4 5 6

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