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HSMS-8109-BLK PDF预览

HSMS-8109-BLK

更新时间: 2024-10-30 13:08:27
品牌 Logo 应用领域
安华高科 - AVAGO 微波混频二极管
页数 文件大小 规格书
6页 236K
描述
SILICON, MIXER DIODE

HSMS-8109-BLK 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.2
Is Samacsys:N二极管元件材料:SILICON
二极管类型:MIXER DIODEJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:4
端子数量:4最大工作频率:14 GHz
最小工作频率:10 GHz最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified子类别:Microwave Mixer Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HSMS-8109-BLK 数据手册

 浏览型号HSMS-8109-BLK的Datasheet PDF文件第2页浏览型号HSMS-8109-BLK的Datasheet PDF文件第3页浏览型号HSMS-8109-BLK的Datasheet PDF文件第4页浏览型号HSMS-8109-BLK的Datasheet PDF文件第5页浏览型号HSMS-8109-BLK的Datasheet PDF文件第6页 
HSMS-8101, 8202, 8207, 8209  
Surface Mount Microwave Schottky Mixer Diodes  
Data Sheet  
Description/Applications  
Features  
Optimized for use at 10‑14 GHz  
Low Capacitance  
These low cost microwave Schottky diodes are specifically  
designed for use at X/Ku‑bands and are ideal for DBS and  
VSAT downconverter applications. They are available in  
SOT‑23 and SOT‑143 standard package configurations.  
Low Conversion Loss  
Low RD  
Note that Avago's manufacturing techniques assure that  
dice found in pairs and quads are taken from adjacent  
sites on the wafer, assuring the highest degree of  
match.  
Low Cost Surface Mount Plastic Package  
Lead‑free  
Plastic SOT-23 Package  
Package Lead Code Identification  
(Top View)  
SINGLE  
3
SERIES  
3
1
2
1
2
#1  
#2  
Plastic SOT-143 Package  
RING  
QUAD  
CROSS-OVER  
QUAD  
3
4
3
4
1
2
1
2
#7  
#9  
Absolute Maximum Ratings[1], TA = +25°C  
Symbol Parameter  
Unit Min. Max.  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
Refer to Avago Application Note A004R:  
Electrostatic Discharge Damage and Control.  
PT  
PIV  
TJ  
Total Device Dissipation[2] mW  
‑65  
75  
Peak Inverse Voltage  
Junction Temperature  
V
4
°C  
°C  
+150  
+150  
TSTG, Top Storage and Operating  
Temperature  
Notes:  
1. Operation in excess of any one of these conditions may result in  
permanent damage to the device.  
2. Measured in an infinite heat sink at TCASE = 25°C. Derate linearly to  
zero at 150°C per diode.  

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