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HSD16M64F8VA-13

更新时间： 2024-11-12 03:12:43
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
11页 88K
描述
Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8 4Banks, 4K Ref., 3.3V

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HSD16M64F8VA-13 数据手册

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HANBit  
HSD16M64F8V/VA  
Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8  
4Banks, 4K Ref., 3.3V  
Part No. HSD16M64F8V/VA  
GENERAL DESCRIPTION  
The HSD16M64F8V/VA is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module  
consists of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages is mounted on a 120-pin,  
double-sided, FR-4-printed circuit board., Two 0.1uF decoupling capacitors are mounted on the printed circuit board in  
parallel for each SDRAM. The HSD16M64F8V/VA is a SMM (Stackable Memory Module) designed and is intended for  
mounting into two 60-pin connector sockets. Synchronous design allows precise cycle control with the use of system clock.  
I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the  
same device to be useful for a variety of high bandwidth, high performance memory system applications All module  
components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.  
PIN ASSIGNMENT  
FEATURES  
• Part Identification  
60-PIN P1 Connector  
60-PIN P2 Connector  
PIN  
Symbol  
PIN  
Symbol  
PIN  
Symbol  
PIN  
Symbol  
HSD16M64F8V :  
1
2
Vcc  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
Vcc  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
Vss  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
Vss  
1
Vss  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
Vss  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
Vcc  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
Vcc  
Stacking Height ( T = 11.3mm )  
HSD16M64F8VA :  
2
3
3
4
4
Stacking Height ( T = 7.3mm )  
5
5
6
6
7
7
• Burst mode operation  
8
8
• Auto & self refresh capability (4K Cycles/64ms)  
• LVTTL compatible inputs and outputs  
• Single 3.3V ±0.3V power supply  
• MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
• All inputs are sampled at the positive going edge  
of the system clock  
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
Vcc  
DQ8  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
Vss  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
Vss  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
Vcc  
• 120pin-SMM type FR4-PCB design  
• The used device is 16Mx8bit SRAM  
• Pin assignment is compatible with  
- HSD8M64F8V  
DQM4  
DQM5  
NC  
DQM0  
DQM1  
/WE  
DQM2  
DQM3  
NC  
DQM6  
DQM7  
NC(A12)  
A11  
CKE0  
CKE1  
Vcc  
CLK0  
CLK1  
Vss  
BA0  
BA1  
A9  
- HSD32M64F8V  
A10/AP  
A0  
A8  
NC  
/CAS  
/RAS  
/CE0  
NC  
A7  
NC  
A1  
A6  
/CE2  
NC  
A2  
A5  
A3  
A4  
Vcc  
Vss  
Vss  
Vcc  
Stackable Memory Module TOP VIEW  
URL: www.hbe.co.kr  
HANBit Electronics Co.,Ltd.  
REV.1.0 (August.2002)  
1
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HSD16M64F8V-F10 HANBIT

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HSD16M72D18A-10 HANBIT

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 		Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.
HSD16M72D18A-10L HANBIT

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 		Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.
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