生命周期: | Obsolete | 包装说明: | SFP, 2 PIN |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.6 | Is Samacsys: | N |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.33 V |
JESD-30 代码: | R-PDSO-F2 | 最大非重复峰值正向电流: | 0.2 A |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最大输出电流: | 0.05 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 25 V | 子类别: | Rectifier Diodes |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | FLAT | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSD226-N | RENESAS |
获取价格 |
暂无描述 | |
HSD-24-4.8 | INFINEON |
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AC-DC Regulated Power Supply Module, 1 Output, 115.2W | |
HSD276A | HITACHI |
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Silicon Schottky Barrier Diode for Detector | |
HSD276A | RENESAS |
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Silicon Schottky Barrier Diode for Detector | |
HSD276AKRF-E | RENESAS |
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SILICON, MIXER DIODE, ROHS COMPLIANT, SFP-2 | |
HSD278 | RENESAS |
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Silicon Schottky Barrier Diode for Detector | |
HSD278 | HITACHI |
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Silicon Schottky Barrier Diode | |
HSD-28-4.0 | INFINEON |
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AC-DC Regulated Power Supply Module, 1 Output, 112W | |
HSD2M64B2 | HANBIT |
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Synchronous DRAM Module 16Mbyte (2Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V | |
HSD2M64B2-10 | HANBIT |
获取价格 |
DRAM |