Datasheet > HSD2118J

HSD2118J

更新时间： 2024-11-12 04:22:15

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
5页	55K
描述
LOW VCE(sat) TRANSISTOR (20V, 5A)

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中文翻译

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数据手册

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HSD2118J 数据手册

Spec. No. : HJ200205

Issued Date : 2002.04.01

Revised Date : 2005.07.14

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HSD2118J

LOW V_CE(sat)TRANSISTOR (20V, 5A)

Feature

• Low V_CE(sat), V_CE(sat)=0.6V(Typ.)(I_C=4A/I_B=0.1A)

• Excellent DC Current Gain Characteristic

• Complements the HSB1386J

TO-252

Structure

Epitaxial Planar Type NPN Silicon Transistor

Absolute Maximum Ratings (T_A=25°C)

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150 °C

Junction Temperature ..................................................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T_A=25°C) ...................................................................................................................... 1 W

Total Power Dissipation (T_C=25°C).................................................................................................................... 10 W

• Maximum Voltages and Currents (T_A=25°C)

V_CBOCollector to Base Voltage ........................................................................................................................... 50 V

_CEOCollector to Emitter Voltage........................................................................................................................ 20 V

_EBOEmitter to Base Voltage ................................................................................................................................ 6 V

I_CCollector Current ............................................................................................................................................... 5 A

I_CCollector Current (Pulse).................................................................................................................................. 10 A

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

I_C=50uA

I_C=1mA

I_E=50uA

V_CB=40V

V_EB=5V

0.5

I_EBO

*V_CE(sat)

*hFE

0.6

I_C/I_B=4A/0.1A

180

620

V_CE=2V, I_C=0.5A

150

MHz

V_CE=6V, I_E=-50mA, f=100MHz

V_CE=20V, I_E=0A, f=1MHz

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE

Rank

Range

180-390

370-620

HSD2118J

HSMC Product Specification

12 3 4 5

中文翻译

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