Datasheet > HSD16M72D18A-13

HSD16M72D18A-13

更新时间： 2024-02-22 04:23:49

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	188K
描述
Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V

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HSD16M72D18A-13 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HSD16M72D18A-13 数据手册

HANBit

HSD16M72D18A

Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on

8Mx8, 4Banks, 4K Ref., 3.3V

Part No. HSD16M72D18A

GENERAL DESCRIPTION

The HSD16M72D18A is a 16M x 72 bit Synchronous Dynamic RAM high-density memory module. The module consists

of eighteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

TSSOP package on a 168-pin glass-epoxy. Two 0.33uF-decoupling capacitors are mounted on the printed circuit board in

parallel for each SDRAM. The HSD16M72D18A is a DIMM (Dual in line Memory Module) and is intended for mounting

into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O

transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance memory system applications All module

components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD16M72D18A-F/10L : 100MHz (CL=3)

HSD16M72D18A-F/10 : 100MHz (CL=2)

HSD16M72D18A-F/12 : 125MHz (CL=3)

HSD16M72D18A-F/13 : 133MHz (CL=3)

HSD16M72D18A-F/13H : 133MHz (CL=2)

F means Auto & Self refresh with Low-Power (3.3V)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 8M x 8bit , 4Banks SDRAM

URL: www.hbe.co.kr

REV 1.0 (August.2002)

HANBit Electronics Co.,Ltd.

12 3 4 5 6 7...10

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HSD16M72D18A-13H	HANBIT	Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.	获取价格
HSD16M72D18A-F10	HANBIT	Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.	获取价格
HSD16M72D18A-F10L	HANBIT	Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.	获取价格
HSD16M72D18A-F12	HANBIT	Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.	获取价格
HSD16M72D18A-F13	HANBIT	Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref.	获取价格
HSD16M72D9A	HANBIT	Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref.,	获取价格