Datasheet > HSD2M64B2-F10

HSD2M64B2-F10

更新时间： 2024-01-20 10:46:32

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HSD2M64B2-F10 技术参数

HANBit

HSD2M64B2

Synchronous DRAM Module 16Mbyte (2Mx64-Bit), SO-DIMM,

4Banks, 4K Ref., 3.3V

Part No. HSD2M64B2

GENERAL DESCRIPTION

The HSD2M64B2 is a 2M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of

two CMOS 512K x 32 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy

substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The

HSD2M64B2 is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge

connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are

possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be

useful for a variety of high bandwidth, high performance memory system applications All module components may be

powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD2M64B2-F/10 :100MHz

HSD2M64B2-F/8 :125MHz

* F : Auto Self-Refresh with Low Power

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• JEDEC standard 144-Pin SO-DIMM

• All inputs are sampled at the positive going edge of the system clock

• The used device is 512Kx32Bitx4Banks SDRAM

URL:www.hbe.co.kr

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd.

12 3 4 5 6 7...10

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