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HSD32M32M4V-F10 PDF预览

HSD32M32M4V-F10

更新时间： 2024-02-22 15:46:12
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
10页 83K
描述
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V

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HSD32M32M4V-F10 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.75
Base Number Matches：1

HSD32M32M4V-F10 数据手册

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HANBit  
HSD32M32M4V  
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on  
32Mx8, 4Banks, 8K Ref., 3.3V  
Part No. HSD32M32M4V  
GENERAL DESCRIPTION  
The HSD32M32M4V is a 32M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists  
of four CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages mounted on a 72-pin, FR-4-printed circuit  
board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The  
HSD32M32M4V is a SIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O  
transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same  
device to be useful for a variety of high bandwidth, high performance memory system applications All module components  
may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.  
PIN ASSIGNMENT  
FEATURES  
• Part Identification  
PIN SYMBOL PIN  
SYMBOL  
DQ14  
DQ15  
DQM1  
NC  
PIN SYMBOL  
HSD32M32M4V-13/F13 :133MHz ( CL=3)  
HSD32M32M4V-12/F12: 125MHz (CL=3)  
HSD32M32M4V-10/F10: 100MHz (CL=2)  
HSD32M32M4V-10L/F10L: 100MHz  
F means Auto & Self refresh with Low – Power (3.3V)  
1
2
Vss  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQM0  
Vcc  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
A5  
A6  
3
A7  
4
A8  
5
/WE  
A9  
6
/CAS  
Vcc  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQM3  
NC  
7
• Burst mode operation  
8
/RAS  
/CS0  
NC  
• Auto & self refresh capability (8192 Cycles/64ms)  
• LVTTL compatible inputs and outputs  
• Single 3.3V ±0.3V power supply  
• MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
• All inputs are sampled at the positive going edge  
of the system clock  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
NC  
NC  
CLK0  
CKE0  
Vss  
A0  
A1  
A2  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQM2  
Vcc  
A3  
A10/AP  
A11  
A4  
• FR4-PCB design  
Vss  
A12  
• 72-Pin SIMM Package  
DQ8  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
Vcc  
• The used device is 8Mx8bitx4Bank SRAM  
• Pin assignment is compatible with  
- HSD8M32M4V  
BA0  
BA1  
NC  
- HSD16M32M4V  
NC  
Vss  
72-PIN SIMM TOP VIEW  
URL:www.hbe.co.kr  
REV.1.0 (August.2002)  
- 1 -  
HANBit Electronics Co.,Ltd  
1234567...10

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