Datasheet > HSD16M72D18A-13

HSD16M72D18A-13

更新时间： 2024-02-15 02:56:18

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	188K
描述
Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V

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技术参数
数据手册

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HSD16M72D18A-13 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HSD16M72D18A-13 数据手册

HANBit

HSD16M72D18A

DC OPERATING CONDITIONS

(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )

PARAMETER

Supply Voltage

SYMBOL

Vcc

V_IH

MIN

3.0

2.0

-0.3

2.4

TYP.

MAX

3.6

UNIT

NOTE

3.3

Input High Voltage

Input Low Voltage

Output High Voltage

Output Low Voltage

3.0

Vcc+0.3

0.8

V_IL

V_OH

V_OL

I_OH= -2mA

I_OL= 2mA

0.4

Input leakage current

I _LI

-10

Notes :

1. V_IH(max) = 5.6V AC. The overshoot voltage duration is £ 3ns.

2. V_IL(min) = -2.0V AC. The undershoot voltage duration is £ 3ns.

3. Any input 0V V_INV_DDQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

DESCRIPTION

SYMBOL

C_CLK

MIN

MAX

UNITS

Clock

/RAS, /CAS,/WE,/CE, CKE, DQM

Address

C_IN

C_ADD

DQ (DQ0 ~ DQ7)

C_OUT

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

TEST

VERSION

-12

PARAMETER

SYMBOL

UNIT NOTE

CONDITION

-13H -13

-10 10L

Burst length = 1

t_RC³ t_RC(min)

Operating current

(One bank active)

I_CC1

1368 1350 1350 1260 1260 mA

I_O= 0mA

CKE £ V_IL(max)

t_CC=10ns

Precharge standby current

I_CC2

CKE & CLK £ V_IL(max)

t_CC=¥

power-down mode

I_CC2PS

CKE ³ V_IH(min)

Precharge standby current

CS* ³ V_IH(min), t_CC=10ns

Input signals are changed one

time during 20ns

I_CC2N

216

non power-down mode

URL: www.hbe.co.kr

REV 1.0 (August.2002)

HANBit Electronics Co.,Ltd.

1 2 3 456 7 8...10

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