生命周期: | Obsolete | 包装说明: | SFP-2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.60 |
风险等级: | 5.35 | 配置: | SINGLE |
最大二极管电容: | 0.85 pF | 二极管元件材料: | SILICON |
二极管类型: | MIXER DIODE | JESD-30 代码: | R-PDSO-F2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最大输出电流: | 0.03 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 5 V | 子类别: | Rectifier Diodes |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | FLAT | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSD276AKRF-E | RENESAS |
获取价格 |
SILICON, MIXER DIODE, ROHS COMPLIANT, SFP-2 | |
HSD278 | RENESAS |
获取价格 |
Silicon Schottky Barrier Diode for Detector | |
HSD278 | HITACHI |
获取价格 |
Silicon Schottky Barrier Diode | |
HSD-28-4.0 | INFINEON |
获取价格 |
AC-DC Regulated Power Supply Module, 1 Output, 112W | |
HSD2M64B2 | HANBIT |
获取价格 |
Synchronous DRAM Module 16Mbyte (2Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V | |
HSD2M64B2-10 | HANBIT |
获取价格 |
DRAM | |
HSD2M64B2-F10 | HANBIT |
获取价格 |
DRAM | |
HSD313 | HSMC |
获取价格 |
NPN EPITAXIAL PLANAR TRANSISTOR | |
HSD32M32M4V | HANBIT |
获取价格 |
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K R | |
HSD32M32M4V-10 | HANBIT |
获取价格 |
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K R |