是否无铅: | 不含铅 | 生命周期: | Obsolete |
包装说明: | R-LTMW-F3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.60 |
风险等级: | 5.36 | 其他特性: | HIGH RELIABILITY VERSION AVAILABLE |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 最大二极管电容: | 0.15 pF |
二极管元件材料: | SILICON | 二极管类型: | MIXER DIODE |
频带: | K BAND | JESD-30 代码: | R-LTMW-F3 |
JESD-609代码: | e3 | 元件数量: | 2 |
端子数量: | 3 | 封装主体材料: | GLASS |
封装形状: | RECTANGULAR | 封装形式: | MICROWAVE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 脉冲输入最大功率: | 0.15 W |
脉冲输入功率最小值: | 1 W | 认证状态: | Not Qualified |
表面贴装: | YES | 技术: | SCHOTTKY |
端子面层: | MATTE TIN | 端子形式: | FLAT |
端子位置: | TRIPLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
肖特基势垒类型: | MEDIUM BARRIER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSCH-5520 | AVAGO |
获取价格 |
SILICON, MEDIUM BARRIER SCHOTTKY,K BAND, MIXER DIODE | |
HSCH-5520 | AGILENT |
获取价格 |
SILICON, MEDIUM BARRIER SCHOTTKY,K BAND, MIXER DIODE | |
HSCH-5530 | AVAGO |
获取价格 |
Mixer Diode, Low Barrier, K Band, Silicon | |
HSCH-5530 | AGILENT |
获取价格 |
Mixer Diode, Low Barrier, K Band, Silicon | |
HSCH5531 | ASI |
获取价格 |
BEAM LEAD SCHOTTKY DIODE | |
HSCH-5531 | AVAGO |
获取价格 |
Beam Lead Schottky Diode Pairs for Mixers and Detectors | |
HSCH-5531 | AGILENT |
获取价格 |
Mixer Diode, Low Barrier, K Band, Silicon | |
HSCH-5532 | AGILENT |
获取价格 |
Mixer Diode, Low Barrier, K Band, Silicon | |
HSCH-5532 | AVAGO |
获取价格 |
Mixer Diode, Low Barrier, K Band, Silicon | |
HSCH-5534 | AVAGO |
获取价格 |
Mixer Diode, Low Barrier, K Band, Silicon |