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HSCH-9102 PDF预览

HSCH-9102

更新时间: 2024-11-11 03:42:51
品牌 Logo 应用领域
安捷伦 - AGILENT 二极管
页数 文件大小 规格书
4页 63K
描述
GaAs Beam Lead Schottky Barrier Diodes

HSCH-9102 数据手册

 浏览型号HSCH-9102的Datasheet PDF文件第2页浏览型号HSCH-9102的Datasheet PDF文件第3页浏览型号HSCH-9102的Datasheet PDF文件第4页 
Agilent HSCH-9101/9201/9251  
GaAs Beam Lead Schottky  
Barrier Diodes  
Data Sheet  
Features  
• Gold tri-metal system for improved  
reliability  
• Low capacitance  
• Low series resistance  
• High cutoff frequency  
• Polyimide passivation  
• Multiple configurations  
HSCH-9201  
Description  
The HSCH-9101 single, the  
HSCH-9201 series pair, and the  
HSCH-9251 anti-parallel pair are  
advanced gallium arsenide  
Schottky barrier diodes. These  
devices are fabricated utilizing  
molecular beam epitaxy (MBE)  
manufacturing techniques and  
feature rugged construction and  
consistent electrical perfor-  
mance. A polyimide coating  
provides scratch protection and  
resistance to contamination.  
115 (4.5)  
105 (4.1)  
280 (11.0)  
200 (7.8)  
183 (7.2)  
178 (7.0)  
346 (13.6)  
266 (10.5)  
712 (28.0)  
702 (27.6)  
9 (0.4)  
7 (0.3)  
60 (2.4)  
50 (2.0)  
L = 0.1 nH  
HSCH-9101  
HSCH-9251 Junction Side Up  
125 (4.9)  
115 (4.5)  
280 (11.0)  
200 (7.8)  
125 (4.9)  
115 (4.5)  
290±50 (11.0)  
200 (7.8)  
183 (7.2)  
178 (7.0)  
270 (10.6)  
190 (7.5)  
636 (25.0)  
626 (24.6)  
183 (7.2)  
178 (7.0)  
280±50 (10.6)  
190 (7.5)  
712 (28.0)  
702 (27.6)  
9 (0.4)  
7 (0.3)  
9 (0.4)  
7 (0.3)  
60 (2.4)  
50 (2.0)  
60 (2.4)  
50 (2.0)  
L = 0.1 nH  
L = 0.1 nH  
DIMENSIONS IN µm (1/1000 inch)  

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