Datasheet > HSB276AS

HSB276AS

更新时间： 2024-09-19 12:33:47

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	69K
描述
CMPAK package is suitable for high density surface mounting and high speed assembly

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HSB276AS 数据手册

Product specification

HSB276AS

Features

High forward current, Low capacitance.

HSB276AS which is interconnected in

series configuration is designed for balanced mixer use.

CMPAK package is suitable for high density surface mounting and high speed assembly.

A b so lu te M a xim u m R a tin g s T a = 2 5

P aram eter

R epetitive peak reverse voltage

R everse voltage

S ym bol

V ^{R R M}

V ^R

V alue

U nit

A verage rectified current

Junction tem perature

S torage tem perature

I^O

m A

T ^j

125

T ^stg

-55 to + 125

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

Conditions

Min

Typ

Max

Unit

V^F

I^R

I^F=1.0 mA

VR =0.5 V

Reverse current

Forward current

Capacitance

I^F

V^F=0.5 V

V^R= 0.5 V, f = 1 MHz

V^R= 0.5V, f = 1 MHz

0.90

0.10

Capacitance deviation

ÄC

C=200pF, R= 0

Both forward and

ESD-Capability (Note 1)

reverse direction 1 pulse.

Note

1. Failure criterion ; I^R

100 A at V^R=0.5 V

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

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