Datasheet > HN58V65A-SR

HN58V65A-SR

更新时间： 2022-11-24 21:45:07

品牌	Logo	应用领域
瑞萨 - RENESAS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
28页	222K
描述
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

HN58V65A-SR 数据手册

HN58V65AI Series

HN58V66AI Series

HN58V65A-SR Series

HN58V66A-SR Series

64k EEPROM (8-kword × 8-bit)

Ready/Busy function, RES function (HN58V66A)

Wide Temperature Range version

REJ03C0153-0300Z

(Previous ADE-203-759B(Z) Rev.2.0)

Rev. 3.00

Feb.02.2004

Description

Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and

programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power

consumption and high reliability by employing advanced MNOS memory technology and CMOS process

and circuitry technology. They also have a 64-byte page programming function to make their write

operations faster.

Features

•

Single supply: 2.7 to 5.5 V

Access time:



100 ns (max) at 2.7 V ≤ V_CC< 4.5 V

70 ns (max) at 4.5 V ≤ V_CC≤ 5.5 V

•

Power dissipation:

 Active: 20 mW/MHz (typ)

 Standby: 110 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 10 ms (max)

Automatic page write (64 bytes): 10 ms (max)

Ready/Busy

Data polling and Toggle bit

Data protection circuit on power on/off

Rev.3.00, Feb.02.2004, page 1 of 26

12 3 4 5 6 7...28

下载PDF

型号	品牌	描述	获取价格	数据表
HN58V65AT-10	HITACHI	64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)	获取价格
HN58V65AT-10	RENESAS	64 k EEPROM (8-kword × 8-bit) Ready/Busy Func	获取价格
HN58V65AT-10E	RENESAS	64 k EEPROM (8-kword × 8-bit) Ready/Busy Func	获取价格
HN58V65AT-10SR	RENESAS	64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature	获取价格
HN58V65AT-10SR	HITACHI	EEPROM, 8KX8, 100ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28	获取价格
HN58V65AT-10SRE	RENESAS	64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature	获取价格