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HN58V66AT-10SR PDF预览

HN58V66AT-10SR

更新时间: 2024-11-29 20:27:35
品牌 Logo 应用领域
日立 - HITACHI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
28页 151K
描述
EEPROM, 8KX8, 100ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28

HN58V66AT-10SR 数据手册

 浏览型号HN58V66AT-10SR的Datasheet PDF文件第2页浏览型号HN58V66AT-10SR的Datasheet PDF文件第3页浏览型号HN58V66AT-10SR的Datasheet PDF文件第4页浏览型号HN58V66AT-10SR的Datasheet PDF文件第5页浏览型号HN58V66AT-10SR的Datasheet PDF文件第6页浏览型号HN58V66AT-10SR的Datasheet PDF文件第7页 
HN58V65AI Series  
HN58V66AI Series  
HN58V65A-SR Series  
HN58V66A-SR Series  
64k EEPROM (8-kword × 8-bit)  
Ready/Busy function, RES function (HN58V66A)  
Wide Temperature Range version  
ADE-203-759B (Z)  
Rev. 2.0  
Oct. 31, 1997  
Description  
The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable  
EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and  
high reliability by employing advanced MNOS memory technology and CMOS process and circuitry  
technology. They also have a 64-byte page programming function to make their write operations faster.  
Features  
Single supply: 2.7 to 5.5 V  
Access time:  
100 ns (max) at 2.7 V VCC < 4.5 V  
70 ns (max) at 4.5 V VCC 5.5 V  
Power dissipation:  
Active: 20 mW/MHz (typ)  
Standby: 110 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms (max)  
Automatic page write (64 bytes): 10 ms (max)  
Ready/Busy  
Data polling and Toggle bit  
Data protection circuit on power on/off  

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